BUK7Y113-100E
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK7Y113-100E
Código: 711310E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 45
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 100
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 12
A
Tjⓘ - Temperatura máxima de unión: 175
°C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4
V
Qgⓘ - Carga de la puerta: 10.4
nC
trⓘ - Tiempo de subida: 5.9
nS
Cossⓘ - Capacitancia
de salida: 72
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.113
Ohm
Paquete / Cubierta:
LFPAK56
POWER-SO8
- Selección de transistores por parámetros
BUK7Y113-100E
Datasheet (PDF)
..1. Size:294K nxp
buk7y113-100e.pdf 
BUK7Y113-100EN-channel 100 V, 113 m standard level MOSFET in LFPAK568 May 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK56 (Power SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 compliant Re
8.1. Size:190K philips
buk7y13-40b.pdf
BUK7Y13-40BN-channel TrenchMOS standard level FETRev. 03 26 May 2008 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in au
8.2. Size:268K nxp
buk7y1r4-40h.pdf
BUK7Y1R4-40HN-channel 40 V, 1.4 m standard level MOSFET in LFPAK5631 May 2018 Product data sheet1. General descriptionAutomotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunctiontechnology, housed in a robust LFPAK56 package. This product has been fully designed andqualified to meet AEC-Q101 requirements delivering high performance and endurance.2. Fea
8.3. Size:343K nxp
buk7y14-80e.pdf
BUK7Y14-80EN-channel 80 V, 14 m standard level MOSFET in LFPAK568 May 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK56 (Power SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 compliant Repeti
8.4. Size:784K nxp
buk7y18-55b.pdf
BUK7Y18-55BN-channel TrenchMOS standard level FETRev. 04 7 April 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use
8.5. Size:295K nxp
buk7y12-100e.pdf
BUK7Y12-100EN-channel 100 V, 12 m standard level MOSFET in LFPAK568 May 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK56 (Power SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 compliant Repe
8.6. Size:316K nxp
buk7y15-100e.pdf
BUK7Y15-100EN-channel 100 V, 15 m standard level MOSFET in LFPAK568 May 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK56 (Power SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 compliant Repe
8.7. Size:293K nxp
buk7y19-100e.pdf
BUK7Y19-100EN-channel 100 V, 19 m standard level MOSFET in LFPAK566 November 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK56 (Power SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 Compliant
8.8. Size:800K nxp
buk7y10-30b.pdf
BUK7Y10-30BN-channel TrenchMOS standard level FETRev. 03 9 April 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use
8.9. Size:262K nxp
buk7y1r7-40h.pdf
BUK7Y1R7-40HN-channel 40 V, 1.7 m standard level MOSFET in LFPAK569 May 2018 Product data sheet1. General descriptionAutomotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunctiontechnology, housed in a robust LFPAK56 package. This product has been fully designed andqualified to meet AEC-Q101 requirements delivering high performance and endurance.2. Feat
8.10. Size:933K nxp
buk7y102-100b.pdf
BUK7Y102-100BN-channel TrenchMOS standard level FETRev. 03 7 April 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use
8.11. Size:790K nxp
buk7y12-55b.pdf
BUK7Y12-55BN-channel TrenchMOS standard level FETRev. 03 7 April 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use
8.12. Size:343K nxp
buk7y15-60e.pdf
BUK7Y15-60EN-channel 60 V, 15 m standard level MOSFET in LFPAK567 May 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK56 (Power SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 compliant Repeti
8.13. Size:312K nxp
buk7y12-40e.pdf
BUK7Y12-40EN-channel 40 V, 12 m standard level MOSFET in LFPAK569 May 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK56 (Power SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 compliant Repeti
8.14. Size:736K nxp
buk7y13-40b.pdf
BUK7Y13-40BN-channel TrenchMOS standard level FETRev. 03 26 May 2008 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use
8.15. Size:799K nxp
buk7y18-75b.pdf
BUK7Y18-75BN-channel TrenchMOS standard level FET1 March 2013 Product data sheet1. General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applicati
8.16. Size:310K nxp
buk7y153-100e.pdf
BUK7Y153-100EN-channel 100 V, 153 m standard level MOSFET in LFPAK568 May 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK56 (Power SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 compliant Re
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History: APQ9ESN20AB
| 2P978D
| AONR30310
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