BUK7Y3R5-40E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK7Y3R5-40E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 167 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 24.9 nS
Cossⓘ - Capacitancia de salida: 514 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm
Encapsulados: LFPAK56 POWER-SO8
Búsqueda de reemplazo de BUK7Y3R5-40E MOSFET
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BUK7Y3R5-40E datasheet
buk7y3r5-40e.pdf
BUK7Y3R5-40E N-channel 40 V, 3.5 m standard level MOSFET in LFPAK56 19 June 2015 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 Compliant Re
buk7y3r5-40h.pdf
BUK7Y3R5-40H N-channel 40 V, 3.5 m standard level MOSFET in LFPAK56 8 May 2018 Product data sheet 1. General description Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a robust LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. 2. Feat
buk7y3r0-40h.pdf
BUK7Y3R0-40H N-channel 40 V, 3.0 m standard level MOSFET in LFPAK56 10 May 2018 Product data sheet 1. General description Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a robust LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. 2. Fea
buk7y38-100e.pdf
BUK7Y38-100E N-channel 100 V, 38 m standard level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repe
Otros transistores... BUK7Y15-60E , BUK7Y19-100E , BUK7Y21-40E , BUK7Y22-100E , BUK7Y25-60E , BUK7Y25-80E , BUK7Y29-40E , BUK7Y38-100E , RFP50N06 , BUK7Y41-80E , BUK7Y43-60E , BUK7Y4R4-40E , BUK7Y4R8-60E , BUK7Y59-60E , BUK7Y65-100E , BUK7Y6R0-60E , BUK7Y72-80E .
History: HM20N15A | BUK954R8-60E
History: HM20N15A | BUK954R8-60E
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