BUK954R8-60E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK954R8-60E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 234 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 10 V
Corriente continua de drenaje |Id|: 100 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.1 V
Carga de la puerta (Qg): 65 nC
Tiempo de subida (tr): 73 nS
Conductancia de drenaje-sustrato (Cd): 607 pF
Resistencia entre drenaje y fuente RDS(on): 0.0045 Ohm
Paquete / Cubierta: TO-220AB
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BUK954R8-60E Datasheet (PDF)
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Philips Semiconductors Product specification TrenchMOS transistor BUK9540-100A Logic level FET BUK9640-100AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 100 VTO220AB and SOT404 . Using ID Drain current (DC) 37 Atrench techn
buk9540-100a.pdf
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BUK95/9640-100ATrenchMOS logic level FETRev. 03 08 February 2002 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9540-100A in SOT78 (TO-220AB)BUK9640-100A in SOT404 (D2-PAK).2. Features TrenchMOS technology Q101 comp
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