BUK954R8-60E Todos los transistores

 

BUK954R8-60E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK954R8-60E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 234 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 10 V
   Corriente continua de drenaje |Id|: 100 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.1 V
   Carga de la puerta (Qg): 65 nC
   Tiempo de subida (tr): 73 nS
   Conductancia de drenaje-sustrato (Cd): 607 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0045 Ohm
   Paquete / Cubierta: TO-220AB

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BUK954R8-60E Datasheet (PDF)

 ..1. Size:213K  nxp
buk954r8-60e.pdf

BUK954R8-60E
BUK954R8-60E

BUK954R8-60EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive

 7.1. Size:318K  philips
buk954r4-40b buk964r4-40b buk9e4r4-40b.pdf

BUK954R8-60E
BUK954R8-60E

BUK95/96/9E4R4-40BTrenchMOS logic level FETRev. 02 13 October 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible.1.3 Application

 7.2. Size:215K  nxp
buk954r4-80e.pdf

BUK954R8-60E
BUK954R8-60E

BUK954R4-80EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive

 8.1. Size:81K  philips
buk9540 buk9640-100a 2.pdf

BUK954R8-60E
BUK954R8-60E

Philips Semiconductors Product specification TrenchMOS transistor BUK9540-100A Logic level FET BUK9640-100AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 100 VTO220AB and SOT404 . Using ID Drain current (DC) 37 Atrench techn

 8.2. Size:314K  philips
buk9540-100a.pdf

BUK954R8-60E
BUK954R8-60E

BUK95/9640-100ATrenchMOS logic level FETRev. 03 08 February 2002 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9540-100A in SOT78 (TO-220AB)BUK9640-100A in SOT404 (D2-PAK).2. Features TrenchMOS technology Q101 comp

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