BUK964R1-40E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK964R1-40E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 182 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 64 nS
Cossⓘ - Capacitancia de salida: 636 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm
Encapsulados: D2PAK
Búsqueda de reemplazo de BUK964R1-40E MOSFET
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BUK964R1-40E datasheet
buk964r1-40e.pdf
BUK964R1-40E N-channel TrenchMOS logic level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Repetitive ava
buk954r4-40b buk964r4-40b buk9e4r4-40b.pdf
BUK95/96/9E4R4-40B TrenchMOS logic level FET Rev. 02 13 October 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible. 1.3 Application
buk964r2-55b.pdf
BUK964R2-55B N-channel TrenchMOS logic level FET Rev. 03 4 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features
buk964r7-80e.pdf
BUK964R7-80E N-channel TrenchMOS logic level FET 13 March 2014 Product data sheet 1. General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits AEC Q101 compliant Repetitive avalanche rated Sui
Otros transistores... BUK9620-100A , BUK962R1-40E , BUK962R5-60E , BUK962R6-40E , BUK962R8-60E , BUK9637-100E , BUK963R1-40E , BUK963R3-60E , IRLZ44N , BUK964R2-60E , BUK964R2-80E , BUK964R7-80E , BUK964R8-60E , BUK965R4-40E , BUK965R8-100E , BUK966R5-60E , BUK968R3-40E .
History: MDF13N50GTH | SMG2398NE
History: MDF13N50GTH | SMG2398NE
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