BUK9K134-100E Todos los transistores

 

BUK9K134-100E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK9K134-100E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 32 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 8.5 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11.3 nS
   Cossⓘ - Capacitancia de salida: 55 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.159 Ohm
   Paquete / Cubierta: LFPAK56D
     - Selección de transistores por parámetros

 

BUK9K134-100E Datasheet (PDF)

 ..1. Size:330K  nxp
 buk9k134-100e.pdf pdf_icon

BUK9K134-100E

BUK9K134-100EDual N-channel 100 V, 159 m logic level MOSFET10 December 2013 Product data sheet1. General descriptionDual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET

 8.1. Size:295K  nxp
 buk9k18-40e.pdf pdf_icon

BUK9K134-100E

BUK9K18-40EDual N-channel TrenchMOS logic level FET23 April 2013 Product data sheet1. General descriptionDual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive avalanche rated

 8.2. Size:279K  nxp
 buk9k12-60e.pdf pdf_icon

BUK9K134-100E

BUK9K12-60EDual N-channel 60 V, 11.5 m logic level MOSFET8 May 2014 Product data sheet1. General descriptionDual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET Q101 com

 8.3. Size:316K  nxp
 buk9k17-60e.pdf pdf_icon

BUK9K134-100E

BUK9K17-60EDual N-channel 60 V, 17 m logic level MOSFET19 March 2014 Product data sheet1. General descriptionDual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET Q101 Co

MOSTRAR MÁS

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History: ME4626-G | KP746B1 | AP4407GS-HF | TMPF11N50SG | IPW65R280E6 | 2SK3679-01MR | NP84N055DLE

 

 
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