BUK9K18-40E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK9K18-40E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 38 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 30 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4.6 nS
Cossⓘ - Capacitancia de salida: 137 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0195 Ohm
Paquete / Cubierta: LFPAK56D
Búsqueda de reemplazo de BUK9K18-40E MOSFET
BUK9K18-40E Datasheet (PDF)
buk9k18-40e.pdf

BUK9K18-40EDual N-channel TrenchMOS logic level FET23 April 2013 Product data sheet1. General descriptionDual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive avalanche rated
buk9k12-60e.pdf

BUK9K12-60EDual N-channel 60 V, 11.5 m logic level MOSFET8 May 2014 Product data sheet1. General descriptionDual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET Q101 com
buk9k134-100e.pdf

BUK9K134-100EDual N-channel 100 V, 159 m logic level MOSFET10 December 2013 Product data sheet1. General descriptionDual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET
buk9k17-60e.pdf

BUK9K17-60EDual N-channel 60 V, 17 m logic level MOSFET19 March 2014 Product data sheet1. General descriptionDual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET Q101 Co
Otros transistores... BUK9E3R7-60E , BUK9E4R4-80E , BUK9E4R9-60E , BUK9E6R1-100E , BUK9E8R5-40E , BUK9K12-60E , BUK9K134-100E , BUK9K17-60E , 8205A , BUK9K25-40E , BUK9K29-100E , BUK9K32-100E , BUK9K35-60E , BUK9K45-100E , BUK9K52-60E , BUK9K6R2-40E , BUK9K6R8-40E .
History: SL20N10 | AOD2904 | 2SK526
History: SL20N10 | AOD2904 | 2SK526



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JBE084M | JBE083NS | JBE083M | JMH70R430AK | JMH70R430AF | JMH65R980APLN | JMH65R980AKQ | JMH65R980AK | JMH65R980AF | JMH65R980ACFP | JMH65R640AK | JMH65R600MK | JMH65R600MF | JMPL1025AK | JMPL1025AE | JMPL0648PKQ
Popular searches
bt152 datasheet | 2sa1302 datasheet | mpsa13 transistor equivalent | кт817г характеристики | 2sc1972 | 2n5088 transistor equivalent | 2n5884 | bc640