BUK9K25-40E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK9K25-40E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 32 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 18.2 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9.2 nS
Cossⓘ - Capacitancia de salida: 95 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm
Paquete / Cubierta: LFPAK56D
Búsqueda de reemplazo de BUK9K25-40E MOSFET
BUK9K25-40E Datasheet (PDF)
buk9k25-40e.pdf

BUK9K25-40EDual N-channel 40 V, 29 m logic level MOSFET10 December 2013 Product data sheet1. General descriptionDual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET Q10
buk9k29-100e.pdf

BUK9K29-100EDual N-channel TrenchMOS logic level FET28 March 2013 Product data sheet1. General descriptionDual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive avalanche rated
buk9k22-80e.pdf

BUK9K22-80EDual N-channel 80 V, 22 m logic level MOSFET11 May 2018 Product data sheet1. General descriptionDual Logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard foruse in high performance automotive applications.2. Features and benefits Dual MOSFET AEC-Q101
buk9k20-80e.pdf

BUK9K20-80EDual N-channel 80 V, 20 m logic level MOSFET11 May 2018 Product data sheet1. General descriptionDual Logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard foruse in high performance automotive applications.2. Features and benefits Dual MOSFET AEC-Q101
Otros transistores... BUK9E4R4-80E , BUK9E4R9-60E , BUK9E6R1-100E , BUK9E8R5-40E , BUK9K12-60E , BUK9K134-100E , BUK9K17-60E , BUK9K18-40E , 2SK3568 , BUK9K29-100E , BUK9K32-100E , BUK9K35-60E , BUK9K45-100E , BUK9K52-60E , BUK9K6R2-40E , BUK9K6R8-40E , BUK9K89-100E .
History: AP8600MT | VBA1311 | HAF2011L | BUK9K45-100E
History: AP8600MT | VBA1311 | HAF2011L | BUK9K45-100E



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