BUK9K8R7-40E Todos los transistores

 

BUK9K8R7-40E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK9K8R7-40E

Código: 98E740

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 53 W

Tensión drenaje-fuente (Vds): 40 V

Tensión compuerta-fuente (Vgs): 10 V

Corriente continua de drenaje (Id): 30 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.1 V

Carga de compuerta (Qg): 15.7 nC

Tiempo de elevación (tr): 19.8 nS

Conductancia de drenaje-sustrato (Cd): 225 pF

Resistencia drenaje-fuente RDS(on): 0.008 Ohm

Empaquetado / Estuche: LFPAK56D

Búsqueda de reemplazo de MOSFET BUK9K8R7-40E

 

BUK9K8R7-40E Datasheet (PDF)

1.1. buk9k8r7-40e.pdf Size:336K _update_mosfet

BUK9K8R7-40E
BUK9K8R7-40E

BUK9K8R7-40E Dual N-channel 40 V, 9.4 mΩ logic level MOSFET 10 December 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Dual MOSFET • Q

4.1. buk9k89-100e.pdf Size:288K _update_mosfet

BUK9K8R7-40E
BUK9K8R7-40E

BUK9K89-100E Dual N-channel TrenchMOS logic level FET 23 April 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive avalanche rated

 5.1. buk9k6r2-40e.pdf Size:294K _update_mosfet

BUK9K8R7-40E
BUK9K8R7-40E

BUK9K6R2-40E Dual N-channel TrenchMOS logic level FET 23 April 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive avalanche rated

5.2. buk9k12-60e.pdf Size:279K _update_mosfet

BUK9K8R7-40E
BUK9K8R7-40E

BUK9K12-60E Dual N-channel 60 V, 11.5 mΩ logic level MOSFET 8 May 2014 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Dual MOSFET • Q101 com

 5.3. buk9k6r8-40e.pdf Size:339K _update_mosfet

BUK9K8R7-40E
BUK9K8R7-40E

BUK9K6R8-40E Dual N-channel 40 V, 7.2 mΩ logic level MOSFET 5 December 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Dual MOSFET • Q1

5.4. buk9k52-60e.pdf Size:250K _update_mosfet

BUK9K8R7-40E
BUK9K8R7-40E

BUK9K52-60E Dual N-channel 60 V, 55 mΩ logic level MOSFET 24 February 2015 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Dual MOSFET • Q101

 5.5. buk9k18-40e.pdf Size:295K _update_mosfet

BUK9K8R7-40E
BUK9K8R7-40E

BUK9K18-40E Dual N-channel TrenchMOS logic level FET 23 April 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive avalanche rated

5.6. buk9k35-60e.pdf Size:244K _update_mosfet

BUK9K8R7-40E
BUK9K8R7-40E

BUK9K35-60E Dual N-channel 60 V, 35 mΩ logic level MOSFET 12 November 2014 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Dual MOSFET • Q101

5.7. buk9k17-60e.pdf Size:316K _update_mosfet

BUK9K8R7-40E
BUK9K8R7-40E

BUK9K17-60E Dual N-channel 60 V, 17 mΩ logic level MOSFET 19 March 2014 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Dual MOSFET • Q101 Co

5.8. buk9k45-100e.pdf Size:299K _update_mosfet

BUK9K8R7-40E
BUK9K8R7-40E

BUK9K45-100E Dual N-channel TrenchMOS logic level FET 26 March 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive avalanche rated

5.9. buk9k32-100e.pdf Size:336K _update_mosfet

BUK9K8R7-40E
BUK9K8R7-40E

BUK9K32-100E Dual N-channel 100 V, 33 mΩ logic level MOSFET 10 December 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Dual MOSFET • Q1

5.10. buk9k25-40e.pdf Size:314K _update_mosfet

BUK9K8R7-40E
BUK9K8R7-40E

BUK9K25-40E Dual N-channel 40 V, 29 mΩ logic level MOSFET 10 December 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Dual MOSFET • Q10

5.11. buk9k134-100e.pdf Size:330K _update_mosfet

BUK9K8R7-40E
BUK9K8R7-40E

BUK9K134-100E Dual N-channel 100 V, 159 mΩ logic level MOSFET 10 December 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Dual MOSFET •

5.12. buk9k29-100e.pdf Size:305K _update_mosfet

BUK9K8R7-40E
BUK9K8R7-40E

BUK9K29-100E Dual N-channel TrenchMOS logic level FET 28 March 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive avalanche rated

Otros transistores... CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 
Back to Top

 


BUK9K8R7-40E
  BUK9K8R7-40E
  BUK9K8R7-40E
  BUK9K8R7-40E
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: SIZ710DT | SIZ704DT | SIZ702DT | SIZ342DT | SIZ340DT | SIZ300DT | SIX3439K | SISS40DN | SISS23DN | SISA18DN | SISA18ADN | SISA14DN | SISA12DN | SISA12ADN | SISA10DN |

 

 

 
Back to Top