BUK9Y15-60E Todos los transistores

 

BUK9Y15-60E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK9Y15-60E
   Código: 91560E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 95 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 53 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.1 V
   Qgⓘ - Carga de la puerta: 17.2 nC
   trⓘ - Tiempo de subida: 17.3 nS
   Cossⓘ - Capacitancia de salida: 182 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm
   Paquete / Cubierta: LFPAK56 POWER-SO8

 Búsqueda de reemplazo de MOSFET BUK9Y15-60E

 

BUK9Y15-60E Datasheet (PDF)

 ..1. Size:343K  nxp
buk9y15-60e.pdf

BUK9Y15-60E BUK9Y15-60E

BUK9Y15-60EN-channel 60 V, 15 m logic level MOSFET in LFPAK567 May 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive a

 6.1. Size:296K  nxp
buk9y15-100e.pdf

BUK9Y15-60E BUK9Y15-60E

BUK9Y15-100EN-channel 100 V, 15 m logic level MOSFET in LFPAK569 May 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive

 7.1. Size:652K  nxp
buk9y153-100e.pdf

BUK9Y15-60E BUK9Y15-60E

BUK9Y153-100EN-channel 100 V, 153 m logic level MOSFET in LFPAK5627 June 2014 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repeti

 8.1. Size:89K  philips
buk9y11-30b.pdf

BUK9Y15-60E BUK9Y15-60E

BUK9Y11-30BN-channel TrenchMOS logic level FETRev. 01 30 August 2007 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode power Field-Effect Transistor (FET) in a plastic packageusing NXP High-Performance Automotive (HPA) TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible1.3

 8.2. Size:189K  philips
buk9y14-40b.pdf

BUK9Y15-60E BUK9Y15-60E

BUK9Y14-40BN-channel TrenchMOS logic level FETRev. 03 2 June 2008 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automoti

 8.3. Size:270K  nxp
buk9y1r3-40h.pdf

BUK9Y15-60E BUK9Y15-60E

BUK9Y1R3-40HN-channel 40 V, 1.3 m logic level MOSFET in LFPAK5631 May 2018 Product data sheet1. General descriptionAutomotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunctiontechnology, housed in a robust LFPAK56 package. This product has been fully designed andqualified to meet AEC-Q101 requirements delivering high performance and endurance.2. Featur

 8.4. Size:312K  nxp
buk9y107-80e.pdf

BUK9Y15-60E BUK9Y15-60E

BUK9Y107-80EN-channel 80 V, 107 m logic level MOSFET in LFPAK568 May 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive

 8.5. Size:749K  nxp
buk9y19-75b.pdf

BUK9Y15-60E BUK9Y15-60E

BUK9Y19-75BN-channel TrenchMOS logic level FETRev. 04 13 April 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Feature

 8.6. Size:321K  nxp
buk9y19-100e.pdf

BUK9Y15-60E BUK9Y15-60E

BUK9Y19-100EN-channel 100 V, 19 m logic level MOSFET in LFPAK566 November 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Applications 12 V, 24 V and 48 V Automotive sys

 8.7. Size:805K  nxp
buk9y104-100b.pdf

BUK9Y15-60E BUK9Y15-60E

BUK9Y104-100BN-channel TrenchMOS logic level FETRev. 04 7 April 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Featur

 8.8. Size:299K  nxp
buk9y113-100e.pdf

BUK9Y15-60E BUK9Y15-60E

BUK9Y113-100EN-channel 100 V, 113 m logic level MOSFET in LFPAK568 May 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetiti

 8.9. Size:315K  nxp
buk9y11-80e.pdf

BUK9Y15-60E BUK9Y15-60E

BUK9Y11-80EN-channel 80 V, 11 m logic level MOSFET in LFPAK568 May 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive a

 8.10. Size:637K  nxp
buk9y11-30b.pdf

BUK9Y15-60E BUK9Y15-60E

BUK9Y11-30BN-channel TrenchMOS logic level FETRev. 01 30 August 2007 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible

 8.11. Size:259K  nxp
buk9y1r6-40h.pdf

BUK9Y15-60E BUK9Y15-60E

BUK9Y1R6-40HN-channel 40 V, 1.6 m logic level MOSFET in LFPAK5631 May 2018 Product data sheet1. General descriptionAutomotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunctiontechnology, housed in a robust LFPAK56 package. This product has been fully designed andqualified to meet AEC-Q101 requirements delivering high performance and endurance.2. Featur

 8.12. Size:735K  nxp
buk9y14-40b.pdf

BUK9Y15-60E BUK9Y15-60E

BUK9Y14-40BN-channel TrenchMOS logic level FETRev. 03 2 June 2008 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in aut

 8.13. Size:294K  nxp
buk9y12-100e.pdf

BUK9Y15-60E BUK9Y15-60E

BUK9Y12-100EN-channel 100 V, 12 m logic level MOSFET in LFPAK569 May 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive

 8.14. Size:318K  nxp
buk9y12-40e.pdf

BUK9Y15-60E BUK9Y15-60E

BUK9Y12-40EN-channel 40 V, 12 m logic level MOSFET in LFPAK567 May 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive a

 8.15. Size:260K  nxp
buk9y1r9-40h.pdf

BUK9Y15-60E BUK9Y15-60E

BUK9Y1R9-40HN-channel 40 V, 1.9 m logic level MOSFET in LFPAK5631 May 2018 Product data sheet1. General descriptionAutomotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunctiontechnology, housed in a robust LFPAK56 package. This product has been fully designed andqualified to meet AEC-Q101 requirements delivering high performance and endurance.2. Featur

 8.16. Size:734K  nxp
buk9y19-55b.pdf

BUK9Y15-60E BUK9Y15-60E

BUK9Y19-55BN-channel TrenchMOS logic level FETRev. 03 29 February 2008 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for

 8.17. Size:813K  nxp
buk9y12-55b.pdf

BUK9Y15-60E BUK9Y15-60E

BUK9Y12-55BN-channel TrenchMOS logic level FETRev. 04 7 April 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

 8.18. Size:290K  nxp
buk9y14-80e.pdf

BUK9Y15-60E BUK9Y15-60E

BUK9Y14-80EN-channel 80 V,15 m logic level MOSFET in LFPAK5611 November 2014 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetit

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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