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BUK9Y29-40E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUK9Y29-40E

Código: 92940E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 37 W

Tensión drenaje-fuente (Vds): 40 V

Tensión compuerta-fuente (Vgs): 10 V

Corriente continua de drenaje (Id): 25 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.1 V

Carga de compuerta (Qg): 5 nC

Tiempo de elevación (tr): 7 nS

Conductancia de drenaje-sustrato (Cd): 85 pF

Resistencia drenaje-fuente RDS(on): 0.025 Ohm

Empaquetado / Estuche: LFPAK56_Power-SO8

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BUK9Y29-40E Datasheet (PDF)

1.1. buk9y29-40e.pdf Size:311K _update_mosfet

BUK9Y29-40E
BUK9Y29-40E

BUK9Y29-40E N-channel 40 V, 29 mΩ logic level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive a

4.1. buk9y21-40e.pdf Size:292K _update_mosfet

BUK9Y29-40E
BUK9Y29-40E

BUK9Y21-40E N-channel 40 V, 21 mΩ logic level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive a

4.2. buk9y22-100e.pdf Size:348K _update_mosfet

BUK9Y29-40E
BUK9Y29-40E

BUK9Y22-100E N-channel 100 V, 22 mΩ logic level MOSFET in LFPAK56 9 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive

 4.3. buk9y25-60e.pdf Size:309K _update_mosfet

BUK9Y29-40E
BUK9Y29-40E

BUK9Y25-60E N-channel 60 V, 25 mΩ logic level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive a

4.4. buk9y25-80e.pdf Size:349K _update_mosfet

BUK9Y29-40E
BUK9Y29-40E

BUK9Y25-80E N-channel 80 V, 27 mΩ logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive a

Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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