BUK9Y6R0-60E Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK9Y6R0-60E 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 195 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 44 nS
Cossⓘ - Capacitancia de salida: 391 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0052 Ohm
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BUK9Y6R0-60E datasheet
buk9y6r0-60e.pdf
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BUK9Y19-75B N-channel TrenchMOS logic level FET Rev. 04 13 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Feature
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BUK9Y19-100E N-channel 100 V, 19 m logic level MOSFET in LFPAK56 6 November 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Applications 12 V, 24 V and 48 V Automotive sys
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BUK9Y59-60E N-channel 60 V, 59 m logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive a
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BUK9Y11-80E N-channel 80 V, 11 m logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive a
buk9y11-30b.pdf
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buk9y1r6-40h.pdf
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buk9y25-60e.pdf
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BUK9Y07-30B N-channel TrenchMOS logic level FET Rev. 03 7 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features
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buk9y53-100b.pdf
BUK9Y53-100B N-channel TrenchMOS logic level FET Rev. 01 30 August 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatibl
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BUK9Y2R8-40H N-channel 40 V, 2.8 m logic level MOSFET in LFPAK56 31 May 2018 Product data sheet 1. General description Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a robust LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. 2. Featur
buk9y14-80e.pdf
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Otros transistores... BUK9Y3R0-40E, BUK9Y3R5-40E, BUK9Y41-80E, BUK9Y43-60E, BUK9Y4R4-40E, BUK9Y4R8-60E, BUK9Y59-60E, BUK9Y65-100E, IRF530, BUK9Y72-80E, BUK9Y7R2-60E, BUK9Y7R6-40E, BUK9Y8R5-80E, BUK9Y8R7-60E, BUZ100, BUZ100L, BUZ100S
Parámetros del MOSFET. Cómo se afectan entre sí.
History: PJM2302NSA | BSC105N10LSFG
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