BUK9Y6R0-60E Todos los transistores

 

BUK9Y6R0-60E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUK9Y6R0-60E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 195 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 44 nS
   Cossⓘ - Capacitancia de salida: 391 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0052 Ohm
   Paquete / Cubierta: LFPAK56 POWER-SO8
 

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BUK9Y6R0-60E datasheet

 ..1. Size:299K  nxp
buk9y6r0-60e.pdf pdf_icon

BUK9Y6R0-60E

BUK9Y6R0-60E N-channel 60 V, 6.0 m logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive... See More ⇒

 8.1. Size:299K  nxp
buk9y65-100e.pdf pdf_icon

BUK9Y6R0-60E

BUK9Y65-100E N-channel 100 V, 65 m logic level MOSFET in LFPAK56 9 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive... See More ⇒

 9.1. Size:89K  philips
buk9y11-30b.pdf pdf_icon

BUK9Y6R0-60E

BUK9Y11-30B N-channel TrenchMOS logic level FET Rev. 01 30 August 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible 1.3 ... See More ⇒

 9.2. Size:189K  philips
buk9y14-40b.pdf pdf_icon

BUK9Y6R0-60E

BUK9Y14-40B N-channel TrenchMOS logic level FET Rev. 03 2 June 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automoti... See More ⇒

Otros transistores... BUK9Y3R0-40E , BUK9Y3R5-40E , BUK9Y41-80E , BUK9Y43-60E , BUK9Y4R4-40E , BUK9Y4R8-60E , BUK9Y59-60E , BUK9Y65-100E , IRFZ24N , BUK9Y72-80E , BUK9Y7R2-60E , BUK9Y7R6-40E , BUK9Y8R5-80E , BUK9Y8R7-60E , BUZ100 , BUZ100L , BUZ100S .

 

 
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