NDB7061 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NDB7061
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 130 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Corriente continua de drenaje |Id|: 64 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Resistencia entre drenaje y fuente RDS(on): 0.016 Ohm
Paquete / Cubierta: TO263
Búsqueda de reemplazo de MOSFET NDB7061
NDB7061 Datasheet (PDF)
ndp7060 ndb7060.pdf
May 1996 NDP7060 / NDB7060N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese N-Channel enhancement mode power field effect75A, 60V. RDS(ON) = 0.013 @ VGS=10V. transistors are produced using Fairchild's proprietary, high cellCritical DC electrical parameters specified at elevateddensity, DMOS technology. This very high density process istempe
ndp7060 ndb7060.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
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May 1994 NDP708A / NDP708AE / NDP708B / NDP708BENDB708A / NDB708AE / NDB708B / NDB708BEN-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-channel enhancement mode power field60 and 54A, 80V. RDS(ON) = 0.022 and 0.025. effect transistors are produced using Fairchild'sCritical DC electrical parameters specified atproprietary, high cell dens
Otros transistores... NDB7050 , NDB7050L , NDB7051 , NDB7051L , NDB7052 , NDB7052L , NDB7060 , NDB7060L , IRF840 , NDB7061L , NDB708A , NDB710A , NDC631N , NDC632P , NDC651N , NDC652P , NDC7002N .
