BUZ103SL Todos los transistores

 

BUZ103SL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUZ103SL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 28 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   trⓘ - Tiempo de subida: 75 nS
   Cossⓘ - Capacitancia de salida: 230 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm
   Paquete / Cubierta: P-TO220

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BUZ103SL Datasheet (PDF)

 ..1. Size:121K  infineon
buz103sl.pdf

BUZ103SL
BUZ103SL

BUZ 103SLSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.026RDS(on) Enhancement modeContinuous drain current 28 AID Avalanche rated Logic Level dv/dt rated 175 C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ103SL P-TO220-3-1

 7.1. Size:77K  siemens
buz103s-4.pdf

BUZ103SL
BUZ103SL

BUZ 103S-4Preliminary dataSIPMOS Power Transistor Quad-channel Enhancement mode Avalanche-rated dv/dt ratedType VDS ID RDS(on) Package Ordering CodeBUZ 103S-4 55 V 5.3 A 0.045 P-DSO-28 C67078-S. . . . -A..Maximum RatingsParameter Symbol Values UnitContinuous drain current one channel active ID ATA = 25 C 5.3Pulsed drain current one channel active I

 7.2. Size:123K  infineon
buz103s.pdf

BUZ103SL
BUZ103SL

BUZ 103SSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.036RDS(on) Enhancement modeContinuous drain current 31 AID Avalanche rated dv/dt rated 175 C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ103S P-TO220-3-1 Q67040-S4009-A2 Tu

 8.1. Size:185K  siemens
buz103al.pdf

BUZ103SL
BUZ103SL

BUZ 103ALSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic Level dv/dt rated Low on-resistance 175 C operating temperaturePin 1 Pin 2 Pin 3 also in TO-220 SMD availableG D SType VDS ID RDS(on) Package Ordering CodeBUZ 103AL 50 V 35 A 0.05 TO-220 AB C67078-S1357-A2Maximum RatingsParameter Symbol Values UnitCo

 8.2. Size:122K  siemens
buz103.pdf

BUZ103SL
BUZ103SL

BUZ 103SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated Low on-resistance 175C operating temperature also in TO-220 SMD availablePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 103 50 V 40 A 0.04 TO-220 AB C67078-S1352-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current

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