BUZ215 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BUZ 215SIPMOS Power Transistor N channel Enhancement mode FREDFETPin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 215 500 V 5 A 1.5 TO-220 AB C67078-A1400-A2Maximum RatingsParameter Symbol Values UnitDrain source voltage VDS 500 VVDGRDrain-gate voltageRGS = 20 k 500Continuous drain current ID ATC = 30 C 5Pulsed drain curre

isc N-Channel Mosfet Transistor BUZ215FEATURESHigh speed switchingLow RDS(ON)Easy driver for cost effective applicationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONAutomotive power actuator driversMotor controlsDC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Sourc

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BUZ 21 LSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic LevelPin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 21 L 100 V 21 A 0.085 TO-220 AB C67078-S1338-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25 C 21Pulsed drain current IDpulsTC = 25 C 84Avalanche current,l

BUZ 21SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 21 100 V 21 A 0.085 TO-220 AB C67078-S1308-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25 C 21Pulsed drain current IDpulsTC = 25 C 84Avalanche current,limited by Tjmax IAR

BUZ 21LSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic LevelPin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 21 L 100 V 21 A 0.085 TO-220 AB C67078-S1338-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25 C 21Pulsed drain current IDpulsTC = 25 C 84Avalanche current,li

PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: BUZ210 PH: (561) 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TO-204AA (TO-3) HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: Drain Source Voltage VDSS 500 Vdc Drain Gate Voltage VDGR 500 Vdc Drain Current Continuo

isc N-Channel Mosfet Transistor BUZ211FEATURESStatic Drain-Source On-Resistance: R = 0.8(Max)DS(on)SOA is Power Dissipation LimitedHigh input impedanceHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators,switching converters, motor drivers,rela

isc N-Channel Mosfet Transistor BUZ21FEATURESStatic Drain-Source On-Resistance: R = 0.1(Max)DS(on)SOA is Power Dissipation LimitedHigh input impedanceHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators, switchingconverters, motor drivers,relay

isc N-Channel Mosfet Transistor BUZ216FEATURESHigh speed switchingLow RDS(ON)Easy driver for cost effective applicationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONAutomotive power actuator driversMotor controlsDC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Sourc