BUZ216 Todos los transistores

 

BUZ216 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUZ216

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 75 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 4.4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Tiempo de elevación (tr): 40 nS

Conductancia de drenaje-sustrato (Cd): 110 pF

Resistencia drenaje-fuente RDS(on): 2 Ohm

Empaquetado / Estuche: TO-220AB

Búsqueda de reemplazo de MOSFET BUZ216

 

BUZ216 Datasheet (PDF)

1.1. buz216.pdf Size:175K _update_mosfet

BUZ216
BUZ216



1.2. buz216.pdf Size:228K _inchange_semiconductor

BUZ216
BUZ216

isc N-Channel Mosfet Transistor BUZ216 ·FEATURES ·High speed switching ·Low R DS(ON) ·Easy driver for cost effective application ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Automotive power actuator drivers ·Motor controls ·DC-DC converters ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Sourc

 5.1. buz215.pdf Size:116K _update_mosfet

BUZ216
BUZ216

BUZ 215 SIPMOS ® Power Transistor • N channel • Enhancement mode • FREDFET Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 215 500 V 5 A 1.5 Ω TO-220 AB C67078-A1400-A2 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 500 V VDGR Drain-gate voltage RGS = 20 kΩ 500 Continuous drain current ID A TC = 30 °C 5 Pulsed drain curre

5.2. buz21l.pdf Size:113K _update_mosfet

BUZ216
BUZ216

BUZ 21 L SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 21 L 100 V 21 A 0.085 Ω TO-220 AB C67078-S1338-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 25 °C 21 Pulsed drain current IDpuls TC = 25 °C 84 Avalanche current,l

 5.3. buz210.pdf Size:25K _update_mosfet

BUZ216
BUZ216

PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: BUZ210 PH: (561) 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TO-204AA (TO-3) HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: Drain – Source Voltage VDSS 500 Vdc Drain – Gate Voltage VDGR 500 Vdc Drain Current – Continuo

5.4. buz210 buz211.pdf Size:371K _update-mosfet

BUZ216
BUZ216

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 5.5. buz21.pdf Size:275K _st2

BUZ216
BUZ216

5.6. buz21l.pdf Size:90K _infineon

BUZ216
BUZ216

BUZ 21L SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic Level Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 21 L 100 V 21 A 0.085 ? TO-220 AB C67078-S1338-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 25 ?C 21 Pulsed drain current IDpuls TC = 25 ?C 84 Avalanche current,limited by Tjmax I

5.7. buz21.pdf Size:90K _infineon

BUZ216
BUZ216

BUZ 21 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 21 100 V 21 A 0.085 ? TO-220 AB C67078-S1308-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 25 ?C 21 Pulsed drain current IDpuls TC = 25 ?C 84 Avalanche current,limited by Tjmax IAR 21 Avalanche

5.8. buz211.pdf Size:223K _inchange_semiconductor

BUZ216
BUZ216

isc N-Channel Mosfet Transistor BUZ211 ·FEATURES ·Static Drain-Source On-Resistance : R = 0.8Ω(Max) DS(on) ·SOA is Power Dissipation Limited ·High input impedance ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,rela

5.9. buz215.pdf Size:228K _inchange_semiconductor

BUZ216
BUZ216

isc N-Channel Mosfet Transistor BUZ215 ·FEATURES ·High speed switching ·Low R DS(ON) ·Easy driver for cost effective application ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Automotive power actuator drivers ·Motor controls ·DC-DC converters ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Sourc

5.10. buz21.pdf Size:229K _inchange_semiconductor

BUZ216
BUZ216

isc N-Channel Mosfet Transistor BUZ21 ·FEATURES ·Static Drain-Source On-Resistance : R = 0.1Ω(Max) DS(on) ·SOA is Power Dissipation Limited ·High input impedance ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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