BUZ21L Todos los transistores

 ..1. Size:113K  siemens
 buz21l.pdf

BUZ 21 L SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic Level Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 21 L 100 V 21 A 0.085 TO-220 AB C67078-S1338-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 25 C 21 Pulsed drain current IDpuls TC = 25 C 84 Avalanche current,l

 ..2. Size:90K  infineon
 buz21l.pdf

BUZ 21L SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic Level Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 21 L 100 V 21 A 0.085 TO-220 AB C67078-S1338-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 25 C 21 Pulsed drain current IDpuls TC = 25 C 84 Avalanche current,li

 9.1. Size:275K  st
 buz21.pdf

 9.2. Size:371K  siemens
 buz210 buz211.pdf

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 9.3. Size:175K  siemens
 buz216.pdf

 9.4. Size:116K  siemens
 buz215.pdf

BUZ 215 SIPMOS Power Transistor N channel Enhancement mode FREDFET Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 215 500 V 5 A 1.5 TO-220 AB C67078-A1400-A2 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 500 V VDGR Drain-gate voltage RGS = 20 k 500 Continuous drain current ID A TC = 30 C 5 Pulsed drain curre

 9.5. Size:90K  infineon
 buz21.pdf

BUZ 21 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 21 100 V 21 A 0.085 TO-220 AB C67078-S1308-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 25 C 21 Pulsed drain current IDpuls TC = 25 C 84 Avalanche current,limited by Tjmax IAR

 9.6. Size:25K  sti
 buz210.pdf

PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE BUZ210 PH (561) 283-4500 FAX (561) 286-8914 Website http //www.semi-tech-inc.com CASE OUTLINE TO-204AA (TO-3) HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING Drain Source Voltage VDSS 500 Vdc Drain Gate Voltage VDGR 500 Vdc Drain Current Continuo

 9.7. Size:223K  inchange semiconductor
 buz211.pdf

isc N-Channel Mosfet Transistor BUZ211 FEATURES Static Drain-Source On-Resistance R = 0.8 (Max) DS(on) SOA is Power Dissipation Limited High input impedance High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,rela

 9.8. Size:229K  inchange semiconductor
 buz21.pdf

isc N-Channel Mosfet Transistor BUZ21 FEATURES Static Drain-Source On-Resistance R = 0.1 (Max) DS(on) SOA is Power Dissipation Limited High input impedance High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay

 9.9. Size:228K  inchange semiconductor
 buz216.pdf

isc N-Channel Mosfet Transistor BUZ216 FEATURES High speed switching Low R DS(ON) Easy driver for cost effective application Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Automotive power actuator drivers Motor controls DC-DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Sourc

 9.10. Size:228K  inchange semiconductor
 buz215.pdf

isc N-Channel Mosfet Transistor BUZ215 FEATURES High speed switching Low R DS(ON) Easy driver for cost effective application Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Automotive power actuator drivers Motor controls DC-DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Sourc