BUZ332A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUZ332A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 70 nS
   Cossⓘ - Capacitancia de salida: 180 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.9 Ohm
   Paquete / Cubierta: TO-218AA

Búsqueda de reemplazo de MOSFET BUZ332A

BUZ332A Datasheet (PDF)

..1. Size:137K siemens
buz332a.pdf

BUZ 332 ASIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 332 A 600 V 8 A 0.9 TO-218 AA C67078-S3123-A4Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 33 C 8Pulsed drain current IDpulsTC = 25 C 32Avalanche current,limited by Tjmax IA

9.1. Size:355K siemens
buz338.pdf

SIPMOS Power Transistor BUZ 338 N channel Enhancement mode Avalanche-rated1)Type VDS ID RDS (on) Package Ordering CodeBUZ 338 500 V 13.5 A 0.4 TO-218 AA C67078-S3126-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current, TC = 28 C ID 13.5 APulsed drain current, TC =25C ID puls 54Avalanche current, limited by Tj max IAR 13.5Avalanche energy, peri

9.2. Size:221K siemens
buz334.pdf

BUZ 334SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 334 600 V 12 A 0.5 TO-218 AA C67078-S3130-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 26 C 12Pulsed drain current IDpulsTC = 25 C 48Avalanche current,limited by Tjmax IAR

9.3. Size:139K siemens
buz339.pdf

BUZ 339SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 339 500 V 11.5 A 0.5 TO-218 AA C67078-S3133-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 33 C 11.5Pulsed drain current IDpulsTC = 25 C 46Avalanche current,limited by Tjmax

9.4. Size:218K siemens
buz330.pdf

BUZ 330SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 330 500 V 9.5 A 0.6 TO-218 AA C67078-S3105-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 28 C 9.5Pulsed drain current IDpulsTC = 25 C 38Avalanche current,limited by Tjmax IA

9.5. Size:212K siemens
buz331.pdf

BUZ 331SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 331 500 V 8 A 0.8 TO-218 AA C67078-S3114-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 35 C 8Pulsed drain current IDpulsTC = 25 C 32Avalanche current,limited by Tjmax IAR 8

9.6. Size:210K inchange semiconductor
buz330.pdf

isc N-Channel Mosfet Transistor BUZ330FEATURESHigh speed switchingLow RDS(ON)Easy driver for cost effective applicationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONAutomotive power actuator driversMotor controlsDC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Sourc

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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