BUZ73L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUZ73L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 60 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
   Paquete / Cubierta: PG-TO220-3

Búsqueda de reemplazo de MOSFET BUZ73L

BUZ73L Datasheet (PDF)

..1. Size:504K infineon
buz73l.pdf

BUZ 73L SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic LevelPin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Pb-freeBUZ 73 L 200 V 7 A 0.4 PG-TO220-3 YesMaximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 28 C 7Pulsed drain current IDpulsTC = 25 C 28Avalanche current,limited by Tjmax IAR

0.1. Size:1667K infineon
buz73lh.pdf

BUZ 73L H SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic Level. Halogen-free according to IEC61249-2-21Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Pb-freeBUZ 73 L H 200 V 7 A 0.4 PG-TO220-3 YesMaximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 28 C 7Pulsed drain current IDpulsTC = 25

9.1. Size:117K siemens
buz73al.pdf

BUZ 73 ALSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic LevelPin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 73 AL 200 V 5.5 A 0.6 TO-220 AB C67078-S1328-A3Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 37 C 5.5Pulsed drain current IDpulsTC = 25 C 22Avalanche current

9.2. Size:1649K infineon
buz73h.pdf

BUZ 73 H SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated . Halogen-free according to IEC61249-2-21Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Pb-freeBUZ 73 200 V 7 A 0.4 PG-TO220-3 YesMaximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 28 C 7Pulsed drain current IDpulsTC = 25 C 28Avalanche cur

9.3. Size:83K infineon
buz73al.pdf

BUZ 73AL SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic LevelPin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 73 AL 200 V 5.5 A 0.6 TO-220 AB C67078-S1328-A3Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 37 C 5.5Pulsed drain current IDpulsTC = 25 C 22Avalanche curren

9.4. Size:1654K infineon
buz73alh.pdf

BUZ 73AL H SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Logic Level. Halogen-free according to IEC61249-2-21Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Pb-freeBUZ 73 AL H 200 V 5.5 A 0.6 PG-TO220-3 YesMaximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 37 C 5.5Pulsed drain current IDpulsTC

9.5. Size:87K infineon
buz73.pdf

BUZ 73 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 73 200 V 7 A 0.4 TO-220 AB C67078-S1317-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 28 C 7Pulsed drain current IDpulsTC = 25 C 28Avalanche current,limited by Tjmax IAR 7

9.6. Size:113K infineon
buz73a.pdf

BUZ 73ASIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Pb-freeBUZ 73 A 200 V 5.5 A 0.6 PG-TO-220 AB yesMaximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 37 C 5.5Pulsed drain current IDpulsTC = 25 C 22Avalanche current,limited by Tjmax IAR 7Avalanche

9.7. Size:1700K infineon
buz73ahg.pdf

BUZ 73A HSIPMOS Power Transistor N channel Enhancement mode Avalanche-rated . Halogen-free according to IEC61249-2-21Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Pb-freeBUZ 73 A 200 V 5.5 A 0.6 PG-TO-220-3 yesMaximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 37 C 5.5Pulsed drain current IDpulsTC = 25 C 22Avalanc

9.8. Size:229K inchange semiconductor
buz73.pdf

isc N-Channel Mosfet Transistor BUZ73FEATURESDrain Source Voltage-: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)Fast Switching SpeedLow Drive RequirementMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned especially for applications such as switchingregulators, switching converte

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