NDC7003P Todos los transistores

NDC7003P Dual P-Channel PowerTrench MOSFET General Description Features These dual P-Channel Enhancement Mode Power Field 0.34A, 60 V. RDS(ON) = 5 @ VGS = 10 V Effect Transistors are produced using ON RDS(ON) = 7 @ VGS = 4.5 V Semiconductor s proprietary Trench Technology. This very high density process has been designed Low gate

May 2002 NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N & P-Channel Enhancement Mode Field Q1 0.51 A, 60V. RDS(ON) = 2 @ VGS = 10 V Effect Transistors are produced using Fairchild s RDS(ON) = 4 @ VGS = 4.5 V proprietary, high cell density, DMOS technology. This very high density process has been des

March 1996 NDC7002N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N-Channel enhancement mode power field 0.51A, 50V, RDS(ON) = 2 @ VGS=10V effect transistors are produced using Fairchild's High density cell design for low RDS(ON). proprietary, high cell density, DMOS technology. This very high density process has been designed to m

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

R R UMW UMW UMW NDC7002N UMW NDC7002N SOT23-6 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N-Channel enhancement mode power field 0.51A, 50V, RDS(ON) = 2 @ VGS=10V effect transistors are produced using Fairchild's High density cell design for low RDS(ON). proprietary, high cell density, DMOS technology. This very high density p