CHM1024VGP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CHM1024VGP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.27 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 0.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 1.06 nC
   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 20 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.36 Ohm
   Paquete / Cubierta: SOT-563

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CHM1024VGP Datasheet (PDF)

..1. Size:91K chenmko
chm1024vgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM1024VGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 700 mAmpereAPPLICATION* Power Management in Note book * Battery Powered System * DC/DC Converter * LCD Display inverter SOT-563FEATURE* Small surface mounting type. (SOT-563)* Low-Voltage Operation (1)(5)* High-Speed Circuits 0.500.9~1

8.1. Size:67K chenmko
chm1023vgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM1023VGPSURFACE MOUNT Dual P-Channel Enhancement Mode Field Effect TransistorVOLTAGE 20 Volts CURRENT 0.5 AmpereFEATURE* Small surface mounting type. (SOT-563)* High density cell design for low RDS(ON).* Suitable for high packing density.SOT-563(1)(5)CONSTRUCTION0.50* P-Channel Enhancement0.9~1.1 1.5~1.70.50(4)(3)0.15~0.31.1~1.

9.1. Size:107K chenmko
chm1012lpagp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM1012LPAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 120 Volts CURRENT 10 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High powe

9.2. Size:67K chenmko
chm10n4ngp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM10N4NGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 450 Volts CURRENT 10 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small flat package. (D2PAK)0.420(10.67)0.190(4.83)* High density cell design for extremely low RDS(ON). 0.380(9.69)0.160(4

9.3. Size:59K chenmko
chm1012pagp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM1012PA SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 120 Volts CURRENT 10 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power

9.4. Size:315K chenmko
chm1012tgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM1012TGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 0.65 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-75/SOT-416FEATURE* Small surface mounting type. (SC-75/SOT-416)* High density cell design for low RDS(ON). * Suitable for high packing den

9.5. Size:443K chenmko
chm1013tgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM1013TGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 0.45 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-75/SOT-416FEATURE* Small surface mounting type. (SC-75/SOT-416)* High density cell design for low RDS(ON). * Suitable for high packing den

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