CHM1203EVJGP Todos los transistores

 

CHM1203EVJGP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CHM1203EVJGP
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 2.5 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 25 V
   Corriente continua de drenaje |Id|: 12 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
   Carga de la puerta (Qg): 48 nC
   Tiempo de subida (tr): 16 nS
   Conductancia de drenaje-sustrato (Cd): 449 pF
   Resistencia entre drenaje y fuente RDS(on): 0.012 Ohm
   Paquete / Cubierta: SO-8

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CHM1203EVJGP Datasheet (PDF)

 ..1. Size:91K  chenmko
chm1203evjgp.pdf

CHM1203EVJGP
CHM1203EVJGP

CHENMKO ENTERPRISE CO.,LTDCHM1203EVJGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 12 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. ( SO-8 )* Super high density cell design for extremely low RDS(ON). ( )4.06 0.160( )3.70 0.146* High p

 9.1. Size:47K  chenmko
chm12n10pagp.pdf

CHM1203EVJGP
CHM1203EVJGP

CHENMKO ENTERPRISE CO.,LTDCHM12N10PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 100 Volts CURRENT 11 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High powe

 9.2. Size:426K  chenmko
chm1273xgp.pdf

CHM1203EVJGP
CHM1203EVJGP

CHENMKO ENTERPRISE CO.,LTDCHM1273XGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 2 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-62/SOT-89FEATURE* Small surface mounting type. (SC-62/SOT-89)* High density cell design for extremely low RDS(ON). 4.6MAX. 1.6MAX.* Rugged

 9.3. Size:318K  chenmko
chm1273gp.pdf

CHM1203EVJGP
CHM1203EVJGP

CHENMKO ENTERPRISE CO.,LTDCHM1273GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 2 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small surface mounting type. (SC-59)* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* Hi

 9.4. Size:69K  chenmko
chm12p10ngp.pdf

CHM1203EVJGP
CHM1203EVJGP

CHENMKO ENTERPRISE CO.,LTDCHM12P10N SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 100 Volts CURRENT 11 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small flat package. (D2PAK )0.420(10.67)0.190(4.83)* High density cell design for extremely low RDS(ON). 0.380(9.69)0.160

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