CHM2108JGP Todos los transistores

 

CHM2108JGP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CHM2108JGP

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 9.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 1.3 V

Carga de compuerta (Qg): 31 nC

Tiempo de elevación (tr): 16 nS

Conductancia de drenaje-sustrato (Cd): 520 pF

Resistencia drenaje-fuente RDS(on): 0.014 Ohm

Empaquetado / Estuche: SO-8

Búsqueda de reemplazo de MOSFET CHM2108JGP

 

CHM2108JGP Datasheet (PDF)

1.1. chm2108jgp.pdf Size:183K _update_mosfet

CHM2108JGP
CHM2108JGP

CHENMKO ENTERPRISE CO.,LTD CHM2108JGP SURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 9.5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * High density cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * Rugged an

4.1. chm210bgp.pdf Size:48K _update_mosfet

CHM2108JGP
CHM2108JGP

CHENMKO ENTERPRISE CO.,LTD CHM210BGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 100 Volts CURRENT 1.3 Ampere APPLICATION * Servo motor control. * Other switching applications. SC-59/SOT-346 FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (2) * High saturation current capability. (3)

 5.1. chm21a2pagp.pdf Size:108K _update_mosfet

CHM2108JGP
CHM2108JGP

CHENMKO ENTERPRISE CO.,LTD CHM21A2PAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 20 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High power

5.2. chm21a3pagp.pdf Size:108K _update_mosfet

CHM2108JGP
CHM2108JGP

CHENMKO ENTERPRISE CO.,LTD CHM21A3PAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 20 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High power

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


CHM2108JGP
  CHM2108JGP
  CHM2108JGP
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: INK0310AP1 | INK0302AC1 | INK021AAP1 | INK0210AP1 | INK0210AC1 | INK0200AC1 | INK011BAP1 | INK0112AU1 | INK0112AM1 | INK0112AC1 | INK0103AU1 | INK0103AM1 | INK0103AC1 | INK0102AU1 | INK0102AM1 |

 

 

 
Back to Top