CHM21A2PAGP Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CHM21A2PAGP 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 38 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
Encapsulados: TO-252
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CHM21A2PAGP datasheet
chm21a2pagp.pdf
CHENMKO ENTERPRISE CO.,LTD CHM21A2PAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 20 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High power
chm21a3pagp.pdf
CHENMKO ENTERPRISE CO.,LTD CHM21A3PAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 20 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High power
chm2108jgp.pdf
CHENMKO ENTERPRISE CO.,LTD CHM2108JGP SURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 9.5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * High density cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * Rugged an
chm210bgp.pdf
CHENMKO ENTERPRISE CO.,LTD CHM210BGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 100 Volts CURRENT 1.3 Ampere APPLICATION * Servo motor control. * Other switching applications. SC-59/SOT-346 FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (2) * High saturation current capability. (3)
Otros transistores... CHM1710PAGP, CHM1825NGP, CHM2030JGP, CHM2082JGP, CHM20N06PAGP, CHM20P06PAGP, CHM2108JGP, CHM210BGP, 13N50, CHM21A3PAGP, CHM2301ESGP, CHM2304GP, CHM2305GP, CHM2307GP, CHM2308ESGP, CHM2310GP, CHM2313GP
Parámetros del MOSFET. Cómo se afectan entre sí.
History: APT7F100S | NDC631N
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