CHM21A3PAGP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CHM21A3PAGP
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 38 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
Encapsulados: TO-252
Búsqueda de reemplazo de CHM21A3PAGP MOSFET
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CHM21A3PAGP datasheet
chm21a3pagp.pdf
CHENMKO ENTERPRISE CO.,LTD CHM21A3PAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 20 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High power
chm21a2pagp.pdf
CHENMKO ENTERPRISE CO.,LTD CHM21A2PAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 20 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High power
chm2108jgp.pdf
CHENMKO ENTERPRISE CO.,LTD CHM2108JGP SURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 9.5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * High density cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * Rugged an
chm210bgp.pdf
CHENMKO ENTERPRISE CO.,LTD CHM210BGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 100 Volts CURRENT 1.3 Ampere APPLICATION * Servo motor control. * Other switching applications. SC-59/SOT-346 FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (2) * High saturation current capability. (3)
Otros transistores... CHM1825NGP, CHM2030JGP, CHM2082JGP, CHM20N06PAGP, CHM20P06PAGP, CHM2108JGP, CHM210BGP, CHM21A2PAGP, 4435, CHM2301ESGP, CHM2304GP, CHM2305GP, CHM2307GP, CHM2308ESGP, CHM2310GP, CHM2313GP, CHM2313GP-A
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