CHM2316QGP Todos los transistores

 

CHM2316QGP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CHM2316QGP

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3 V

Carga de compuerta (Qg): 12.3 nC

Tiempo de elevación (tr): 3 nS

Resistencia drenaje-fuente RDS(on): 0.034 Ohm

Empaquetado / Estuche: SOT-457

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CHM2316QGP Datasheet (PDF)

1.1. chm2316qgp.pdf Size:108K _update_mosfet

CHM2316QGP
CHM2316QGP

CHENMKO ENTERPRISE CO.,LTD CHM2316QGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 6 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-74/SOT-457 FEATURE * Small flat package. (SC-74/SOT-457) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (1) (6) *

3.1. chm2316gp.pdf Size:69K _update_mosfet

CHM2316QGP
CHM2316QGP

CHENMKO ENTERPRISE CO.,LTD CHM2316GP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4.8 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (2) * High sat

 4.1. chm2313qgp.pdf Size:413K _update_mosfet

CHM2316QGP
CHM2316QGP

CHENMKO ENTERPRISE CO.,LTD CHM2313QGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4.6 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-74/SOT-457 FEATURE * Small flat package. (SC-74/SOT-457) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (1) (6)

4.2. chm2313gp-a.pdf Size:154K _update_mosfet

CHM2316QGP
CHM2316QGP

CHENMKO ENTERPRISE CO.,LTD CHM2313GP-A SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 3.6 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (2) * High s

 4.3. chm2314gp.pdf Size:74K _update_mosfet

CHM2316QGP
CHM2316QGP

CHENMKO ENTERPRISE CO.,LTD CHM2314GP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (2) * High satur

4.4. chm2310gp.pdf Size:352K _update_mosfet

CHM2316QGP
CHM2316QGP

CHENMKO ENTERPRISE CO.,LTD CHM2310GP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4.8 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturati

 4.5. chm2313gp.pdf Size:90K _update_mosfet

CHM2316QGP
CHM2316QGP

CHENMKO ENTERPRISE CO.,LTD CHM2313GP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 3.6 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (2) * High sat

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