CHM2316QGP Todos los transistores

 

CHM2316QGP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CHM2316QGP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.034 Ohm
   Paquete / Cubierta: SOT-457
 

 Búsqueda de reemplazo de CHM2316QGP MOSFET

   - Selección ⓘ de transistores por parámetros

 

CHM2316QGP Datasheet (PDF)

 ..1. Size:108K  chenmko
 chm2316qgp.pdf pdf_icon

CHM2316QGP

CHENMKO ENTERPRISE CO.,LTDCHM2316QGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 6 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-74/SOT-457FEATURE* Small flat package. (SC-74/SOT-457)* High density cell design for extremely low RDS(ON). * Rugged and reliable. (1) (6)*

 7.1. Size:69K  chenmko
 chm2316gp.pdf pdf_icon

CHM2316QGP

CHENMKO ENTERPRISE CO.,LTDCHM2316GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High sat

 8.1. Size:413K  chenmko
 chm2313qgp.pdf pdf_icon

CHM2316QGP

CHENMKO ENTERPRISE CO.,LTDCHM2313QGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4.6 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-74/SOT-457FEATURE* Small flat package. (SC-74/SOT-457)* High density cell design for extremely low RDS(ON). * Rugged and reliable. (1) (6)

 8.2. Size:352K  chenmko
 chm2310gp.pdf pdf_icon

CHM2316QGP

CHENMKO ENTERPRISE CO.,LTDCHM2310GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.* High saturati

MOSTRAR MÁS

Otros transistores... CHM2307GP , CHM2308ESGP , CHM2310GP , CHM2313GP , CHM2313GP-A , CHM2313QGP , CHM2314GP , CHM2316GP , IRLB4132 , CHM2321GP , CHM2323GP , CHM2331GP , CHM2331QGP , CHM2342GP , CHM2346ESGP , CHM2362GP , CHM2401JGP .

History: UTC654 | AM30N08-80D | IPB015N08N5 | SVF13N50S | ME4953-G

 

 
Back to Top

 


 
.