CHM3060JGP Todos los transistores

 

CHM3060JGP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CHM3060JGP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 14 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 325 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0078 Ohm
   Paquete / Cubierta: SO-8

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CHM3060JGP Datasheet (PDF)

 ..1. Size:196K  chenmko
chm3060jgp.pdf

CHM3060JGP
CHM3060JGP

CHENMKO ENTERPRISE CO.,LTDCHM3060JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 14 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High satu

 9.1. Size:103K  chenmko
chm3055zgp.pdf

CHM3060JGP
CHM3060JGP

CHENMKO ENTERPRISE CO.,LTDCHM3055ZGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 4.0 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-73/SOT-223FEATURE* Small package. (SC-73/SOT-223 )1.65+0.15* High density cell design for extremely low RDS(ON). 6.50+0.200.90+0.052.

 9.2. Size:533K  chenmko
chm3082jgp.pdf

CHM3060JGP
CHM3060JGP

CHENMKO ENTERPRISE CO.,LTDCHM3082JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 12 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High satu

 9.3. Size:115K  chenmko
chm3055lxgp.pdf

CHM3060JGP
CHM3060JGP

CHENMKO ENTERPRISE CO.,LTDCHM3055LXGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 3.7 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-62/SOT-89FEATURE* Small package. (SC-62/SOT-89 )* High density cell design for extremely low RDS(ON). 4.6MAX. 1.6MAX.* Rugged and reliab

 9.4. Size:57K  chenmko
chm3032jgp.pdf

CHM3060JGP
CHM3060JGP

CHENMKO ENTERPRISE CO.,LTDCHM3032JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect TransistorVOLTAGE 30 Volts CURRENT 18 AmpereAPPLICATION* Servo motor control.* Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High satura

 9.5. Size:109K  chenmko
chm3055lapagp.pdf

CHM3060JGP
CHM3060JGP

CHENMKO ENTERPRISE CO.,LTDCHM3055LAPAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 12 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High powe

 9.6. Size:130K  chenmko
chm3083jgp.pdf

CHM3060JGP
CHM3060JGP

CHENMKO ENTERPRISE CO.,LTDCHM3083JGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 13 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High power

 9.7. Size:144K  chenmko
chm30n15lngp.pdf

CHM3060JGP
CHM3060JGP

CHENMKO ENTERPRISE CO.,LTDCHM30N15LNGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 150 Volts CURRENT 28 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small package. (D2PAK)* Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. 0

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