CHM30N15LNGP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CHM30N15LNGP
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 56 W
Tensión drenaje-fuente (Vds): 150 V
Tensión compuerta-fuente (Vgs): 12 V
Corriente continua de drenaje (Id): 28 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 1.5 V
Carga de compuerta (Qg): 88 nC
Tiempo de elevación (tr): 10 nS
Conductancia de drenaje-sustrato (Cd): 250 pF
Resistencia drenaje-fuente RDS(on): 0.07 Ohm
Empaquetado / Estuche: D2PAK
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CHM30N15LNGP Datasheet (PDF)
1.1. chm30n15lngp.pdf 
Size:144K _update_mosfet
CHENMKO ENTERPRISE CO.,LTD CHM30N15LNGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 150 Volts CURRENT 28 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small package. (D2PAK) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. 0
5.1. chm3082jgp.pdf Size:533K _update_mosfet
CHENMKO ENTERPRISE CO.,LTD CHM3082JGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 12 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super High density cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * High satu
5.2. chm3032jgp.pdf Size:57K _update_mosfet
CHENMKO ENTERPRISE CO.,LTD CHM3032JGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 18 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super High density cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * High satura
5.3. chm3055lapagp.pdf Size:109K _update_mosfet
CHENMKO ENTERPRISE CO.,LTD CHM3055LAPAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 12 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High powe
5.4. chm3083jgp.pdf Size:130K _update_mosfet
CHENMKO ENTERPRISE CO.,LTD CHM3083JGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 13 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * High power
5.5. chm3055lxgp.pdf Size:115K _update_mosfet
CHENMKO ENTERPRISE CO.,LTD CHM3055LXGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 3.7 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-62/SOT-89 FEATURE * Small package. (SC-62/SOT-89 ) * High density cell design for extremely low RDS(ON). 4.6MAX. 1.6MAX. * Rugged and reliab
5.6. chm3060jgp.pdf Size:196K _update_mosfet
CHENMKO ENTERPRISE CO.,LTD CHM3060JGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 14 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super High density cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * High satu
5.7. chm3055zgp.pdf Size:103K _update_mosfet
CHENMKO ENTERPRISE CO.,LTD CHM3055ZGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 4.0 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-73/SOT-223 FEATURE * Small package. (SC-73/SOT-223 ) 1.65+0.15 * High density cell design for extremely low RDS(ON). 6.50+0.20 0.90+0.05 2.
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