CHM3178JGP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CHM3178JGP
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
Paquete / Cubierta: SO-8
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CHM3178JGP Datasheet (PDF)
chm3178jgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM3178JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 7.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High power
chm3172jgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM3172JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 8.9 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High sat
chm310gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM310GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 100 Volts CURRENT 170 mAmpereAPPLICATION* Servo motor control. * Other switching applications.SOT-23FEATURE* Small flat package. (SOT-23 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.* High saturation current capability. (1)(3)CO
chm3128jgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM3128JGPSURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 9 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged and
chm3120jgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM3120JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 10 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High power
chm3120pagp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM3120PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 36 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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