CHM3U22SESGP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CHM3U22SESGP
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 0.15 W
Tensión drenaje-fuente (Vds): 30 V
Tensión compuerta-fuente (Vgs): 8 V
Corriente continua de drenaje (Id): 0.2 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 1.2 V
Conductancia de drenaje-sustrato (Cd): 6.8 pF
Resistencia drenaje-fuente RDS(on): 1.1 Ohm
Empaquetado / Estuche: SOT-363
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CHM3U22SESGP Datasheet (PDF)
1.1. chm3u22sesgp.pdf 
Size:242K _update_mosfet
CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT CHM3U22 ESGP Dual Enhancement Mode Field Effect Transistor N-channel: VOLTAGE 30 Volts CURRENT 0.2 Ampere P-channel: VOLTAGE 30 Volts CURRENT 0.2 Ampere APPLICATION * High speed switching , Analog switching SC-88/SOT-363 FEATURE * Small flat package. ( SOT- 63 ) * Super high dense cell design for extremely low RDS(ON). * Lead free produc
3.1. chm3u22vesgp.pdf Size:266K _update_mosfet
CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT CHM3U22VESGP Dual Enhancement Mode Field Effect Transistor N-channel: VOLTAGE 30 Volts CURRENT 0.2 Ampere P-channel: VOLTAGE 30 Volts CURRENT 0.2 Ampere APPLICATION * High speed switching , Analog switching SOT-563 FEATURE * Small flat package. (SOT-563 ) * Super high dense cell design for extremely low RDS(ON). * Lead free product is acquire
5.1. chm3u33sesgp.pdf Size:489K _update_mosfet
CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT CHM3U33SESGP Dual Enhancement Mode Field Effect Transistor N-channel: VOLTAGE 20 Volts CURRENT 0.2 Ampere P-channel: VOLTAGE 20 Volts CURRENT 0.2 Ampere APPLICATION * High speed switching , Analog switching SC-88/SOT-363 FEATURE * Small flat package. (SC-88/SOT-363 ) * Super high dense cell design for extremely low RDS(ON). * Lead free produc
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