CHM3U22SESGP Todos los transistores

 

CHM3U22SESGP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CHM3U22SESGP
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 0.2 A
   Tjⓘ - Temperatura máxima de unión: 125 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.2 V
   Cossⓘ - Capacitancia de salida: 6.8 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.1 Ohm
   Paquete / Cubierta: SOT-363

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CHM3U22SESGP Datasheet (PDF)

 ..1. Size:242K  chenmko
chm3u22sesgp.pdf

CHM3U22SESGP
CHM3U22SESGP

CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNT CHM3U22 ESGPDual Enhancement Mode Field Effect TransistorN-channel: VOLTAGE 30 Volts CURRENT 0.2 AmpereP-channel: VOLTAGE 30 Volts CURRENT 0.2 AmpereAPPLICATION* High speed switching , Analog switching SC-88/SOT-363FEATURE* Small flat package. ( SOT- 63 )* Super high dense cell design for extremely low RDS(ON).* Lead free produc

 7.1. Size:266K  chenmko
chm3u22vesgp.pdf

CHM3U22SESGP
CHM3U22SESGP

CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNT CHM3U22VESGPDual Enhancement Mode Field Effect TransistorN-channel: VOLTAGE 30 Volts CURRENT 0.2 AmpereP-channel: VOLTAGE 30 Volts CURRENT 0.2 AmpereAPPLICATION* High speed switching , Analog switching SOT-563FEATURE* Small flat package. (SOT-563 )* Super high dense cell design for extremely low RDS(ON).* Lead free product is acquire

 9.1. Size:489K  chenmko
chm3u33sesgp.pdf

CHM3U22SESGP
CHM3U22SESGP

CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNT CHM3U33SESGPDual Enhancement Mode Field Effect TransistorN-channel: VOLTAGE 20 Volts CURRENT 0.2 AmpereP-channel: VOLTAGE 20 Volts CURRENT 0.2 AmpereAPPLICATION* High speed switching , Analog switching SC-88/SOT-363FEATURE* Small flat package. (SC-88/SOT-363 )* Super high dense cell design for extremely low RDS(ON).* Lead free produc

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