CHM4311JGP Todos los transistores

 

CHM4311JGP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CHM4311JGP
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 16.4 nC
   trⓘ - Tiempo de subida: 7 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
   Paquete / Cubierta: SO-8

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CHM4311JGP Datasheet (PDF)

 ..1. Size:68K  chenmko
chm4311jgp.pdf

CHM4311JGP
CHM4311JGP

CHENMKO ENTERPRISE CO.,LTDCHM4311JGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 9.3 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High power

 7.1. Size:163K  chenmko
chm4311pagp.pdf

CHM4311JGP
CHM4311JGP

CHENMKO ENTERPRISE CO.,LTDCHM4311PAGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 33 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small flat package. ( TO-252 )* Super high density cell design for extremely low RDS(ON). .094 (2.40)* High power and

 9.1. Size:101K  chenmko
chm4301jgp.pdf

CHM4311JGP
CHM4311JGP

CHENMKO ENTERPRISE CO.,LTDCHM4301JGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts CURRENT 20 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. ( SO-8 )* Super high density cell design for extremely low RDS(ON). ( )4.06 0.160( )3.70 0.146* High pow

 9.2. Size:102K  chenmko
chm4301pagp.pdf

CHM4311JGP
CHM4311JGP

CHENMKO ENTERPRISE CO.,LTDCHM4301PAGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts CURRENT 20 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small flat package. ( TO-252 )* Super high density cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* Hi

 9.3. Size:111K  chenmko
chm4301zgp.pdf

CHM4311JGP
CHM4311JGP

CHENMKO ENTERPRISE CO.,LTDCHM4301ZGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts CURRENT 6.3 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-73/SOT-223FEATURE* Small flat package. ( SC-73/SOT-223 )1.65+0.15* High density cell design for extremely low RDS(ON). 6.50+0.200.90+0.

 9.4. Size:196K  chenmko
chm4308jgp.pdf

CHM4311JGP
CHM4311JGP

CHENMKO ENTERPRISE CO.,LTDCHM4308JGPSURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts CURRENT 5.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged an

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