CHM4311PAGP Todos los transistores

 

CHM4311PAGP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CHM4311PAGP
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 36 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 33 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 395 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
   Paquete / Cubierta: TO-252
 

 Búsqueda de reemplazo de CHM4311PAGP MOSFET

   - Selección ⓘ de transistores por parámetros

 

CHM4311PAGP Datasheet (PDF)

 ..1. Size:163K  chenmko
 chm4311pagp.pdf pdf_icon

CHM4311PAGP

CHENMKO ENTERPRISE CO.,LTDCHM4311PAGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 33 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small flat package. ( TO-252 )* Super high density cell design for extremely low RDS(ON). .094 (2.40)* High power and

 7.1. Size:68K  chenmko
 chm4311jgp.pdf pdf_icon

CHM4311PAGP

CHENMKO ENTERPRISE CO.,LTDCHM4311JGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 9.3 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High power

 9.1. Size:101K  chenmko
 chm4301jgp.pdf pdf_icon

CHM4311PAGP

CHENMKO ENTERPRISE CO.,LTDCHM4301JGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts CURRENT 20 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. ( SO-8 )* Super high density cell design for extremely low RDS(ON). ( )4.06 0.160( )3.70 0.146* High pow

 9.2. Size:102K  chenmko
 chm4301pagp.pdf pdf_icon

CHM4311PAGP

CHENMKO ENTERPRISE CO.,LTDCHM4301PAGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts CURRENT 20 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small flat package. ( TO-252 )* Super high density cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* Hi

MOSTRAR MÁS

Otros transistores... CHM4269JGP , CHM4269PA4GP , CHM4282JGP , CHM4301JGP , CHM4301PAGP , CHM4301ZGP , CHM4308JGP , CHM4311JGP , IRF540N , CHM4410AJGP , CHM4410BJGP , CHM4412JGP , CHM4416JGP , CHM4426JGP , CHM4431JGP , CHM4432JGP , CHM4435AJGP .

History: 2N6800JANTX | 2N6659-LCC4 | CEF6601 | CEM4207 | RQJ0306FQDQS | SST65R280S2 | AON2701

 

 
Back to Top

 


 
.