CHM4311PAGP Todos los transistores

 

CHM4311PAGP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CHM4311PAGP
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 36 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 33 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
   Carga de la puerta (Qg): 16.4 nC
   Tiempo de subida (tr): 7 nS
   Conductancia de drenaje-sustrato (Cd): 395 pF
   Resistencia entre drenaje y fuente RDS(on): 0.018 Ohm
   Paquete / Cubierta: TO-252

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CHM4311PAGP Datasheet (PDF)

 ..1. Size:163K  chenmko
chm4311pagp.pdf

CHM4311PAGP
CHM4311PAGP

CHENMKO ENTERPRISE CO.,LTDCHM4311PAGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 33 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small flat package. ( TO-252 )* Super high density cell design for extremely low RDS(ON). .094 (2.40)* High power and

 7.1. Size:68K  chenmko
chm4311jgp.pdf

CHM4311PAGP
CHM4311PAGP

CHENMKO ENTERPRISE CO.,LTDCHM4311JGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 9.3 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High power

 9.1. Size:101K  chenmko
chm4301jgp.pdf

CHM4311PAGP
CHM4311PAGP

CHENMKO ENTERPRISE CO.,LTDCHM4301JGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts CURRENT 20 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. ( SO-8 )* Super high density cell design for extremely low RDS(ON). ( )4.06 0.160( )3.70 0.146* High pow

 9.2. Size:102K  chenmko
chm4301pagp.pdf

CHM4311PAGP
CHM4311PAGP

CHENMKO ENTERPRISE CO.,LTDCHM4301PAGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts CURRENT 20 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small flat package. ( TO-252 )* Super high density cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* Hi

 9.3. Size:111K  chenmko
chm4301zgp.pdf

CHM4311PAGP
CHM4311PAGP

CHENMKO ENTERPRISE CO.,LTDCHM4301ZGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts CURRENT 6.3 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-73/SOT-223FEATURE* Small flat package. ( SC-73/SOT-223 )1.65+0.15* High density cell design for extremely low RDS(ON). 6.50+0.200.90+0.

 9.4. Size:196K  chenmko
chm4308jgp.pdf

CHM4311PAGP
CHM4311PAGP

CHENMKO ENTERPRISE CO.,LTDCHM4308JGPSURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts CURRENT 5.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged an

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