CHM4311PAGP Todos los transistores

 

CHM4311PAGP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CHM4311PAGP

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 36 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 33 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3 V

Carga de compuerta (Qg): 16.4 nC

Tiempo de elevación (tr): 7 nS

Conductancia de drenaje-sustrato (Cd): 395 pF

Resistencia drenaje-fuente RDS(on): 0.018 Ohm

Empaquetado / Estuche: TO-252

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CHM4311PAGP Datasheet (PDF)

1.1. chm4311pagp.pdf Size:163K _update_mosfet

CHM4311PAGP
CHM4311PAGP

CHENMKO ENTERPRISE CO.,LTD CHM4311PAGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 33 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small flat package. ( TO-252 ) * Super high density cell design for extremely low RDS(ON). .094 (2.40) * High power and

3.1. chm4311jgp.pdf Size:68K _update_mosfet

CHM4311PAGP
CHM4311PAGP

CHENMKO ENTERPRISE CO.,LTD CHM4311JGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 9.3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * High power

 5.1. chm4301jgp.pdf Size:101K _update_mosfet

CHM4311PAGP
CHM4311PAGP

CHENMKO ENTERPRISE CO.,LTD CHM4301JGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts CURRENT 20 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. ( SO-8 ) * Super high density cell design for extremely low RDS(ON). ( ) 4.06 0.160 ( ) 3.70 0.146 * High pow

5.2. chm4308jgp.pdf Size:196K _update_mosfet

CHM4311PAGP
CHM4311PAGP

CHENMKO ENTERPRISE CO.,LTD CHM4308JGP SURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts CURRENT 5.8 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * High density cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * Rugged an

 5.3. chm4301pagp.pdf Size:102K _update_mosfet

CHM4311PAGP
CHM4311PAGP

CHENMKO ENTERPRISE CO.,LTD CHM4301PAGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts CURRENT 20 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small flat package. ( TO-252 ) * Super high density cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * Hi

5.4. chm4301zgp.pdf Size:111K _update_mosfet

CHM4311PAGP
CHM4311PAGP

CHENMKO ENTERPRISE CO.,LTD CHM4301ZGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts CURRENT 6.3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-73/SOT-223 FEATURE * Small flat package. ( SC-73/SOT-223 ) 1.65+0.15 * High density cell design for extremely low RDS(ON). 6.50+0.20 0.90+0.

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