NDP5060 Todos los transistores

 

NDP5060 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NDP5060
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 68 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Id|ⓘ - Corriente continua de drenaje: 26 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

NDP5060 Datasheet (PDF)

 0.1. Size:358K  fairchild semi
 ndp5060l ndb5060l.pdf pdf_icon

NDP5060

October 1996 NDP5060L / NDB5060L N-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese logic level N-Channel enhancement mode power 26 A, 60 V. RDS(ON) = 0.05 @ VGS= 5 V field effect transistors are produced using Fairchild's RDS(ON) = 0.035 @ VGS= 10 V. proprietary, high cell density, DMOS technology. ThisCritical DC electrical p

 0.2. Size:468K  onsemi
 ndp5060l ndb5060l.pdf pdf_icon

NDP5060

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... NDH8503N , NDH8504P , NDP4050 , NDP4050L , NDP4060 , NDP4060L , NDP408A , NDP410A , AON7410 , NDP5060L , NDP508A , NDP510A , NDP6020 , NDP6020P , NDP6030 , NDP6030L , NDP6030PL .

History: VS3620DP-G | 2SJ152

 

 
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