CHM630PAGP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CHM630PAGP
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 80 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.36 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de CHM630PAGP MOSFET
CHM630PAGP Datasheet (PDF)
chm630pagp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM630PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 200 Volts CURRENT 7.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power
chm6308sgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM6308SGPSURFACE MOUNT Dual P-Channel Enhancement Mode Field Effect TransistorVOLTAGE 20 Volts CURRENT 1.0 AmpereAPPLICATION* Power Management in Note book * Portable Equipment* Battery Powered System* DC/DC ConverterSC-88/SOT-363* Load Switch* DSC. * LCD Display inverter (6)(1)FEATURE0.651.2~1.4 2.0~2.2* Small surface mounting
chm6338jgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM6338JGPSURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 5.2 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged an
chm63a3pagp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM63A3PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 55 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power
Otros transistores... CHM6060RPAGP , CHM610ADPAGP , CHM6168PAGP , CHM6186JGP , CHM61A3PAGP , CHM62A2PAGP , CHM62A3PAGP , CHM6308SGP , 5N65 , CHM6335SGP , CHM6336JGP , CHM6338JGP , CHM634PAGP , CHM63A3PAGP , CHM640NGP , CHM6426JGP , CHM6426PAGP .
History: VS3640DE | SSF2316E



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