CHM63A3PAGP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CHM63A3PAGP
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 57 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 55 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 18 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de MOSFET CHM63A3PAGP
CHM63A3PAGP Datasheet (PDF)
chm63a3pagp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM63A3PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 55 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power
chm630pagp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM630PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 200 Volts CURRENT 7.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power
chm6338jgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM6338JGPSURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 5.2 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged an
chm634pagp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM634PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 250 Volts CURRENT 6.7 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power
chm6336jgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM6336JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 5.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High power
chm6335sgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM6335SGPSURFACE MOUNTDual N-Channel Enhancement MOS FET VOLTAGE 20 Volts CURRENT 1.2 AmpereAPPLICATION* Power Management in Note book * Portable Equipment* Battery Powered System* DC/DC Converter SC-88/SOT-363* Load Switch* DSC(1)(S1) (D1)(6)* LCD Display inverter (G1) 0.651.2~1.4 2.0~2.2FEATURE(G2)0.65* Small surface mounting
chm6308sgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM6308SGPSURFACE MOUNT Dual P-Channel Enhancement Mode Field Effect TransistorVOLTAGE 20 Volts CURRENT 1.0 AmpereAPPLICATION* Power Management in Note book * Portable Equipment* Battery Powered System* DC/DC ConverterSC-88/SOT-363* Load Switch* DSC. * LCD Display inverter (6)(1)FEATURE0.651.2~1.4 2.0~2.2* Small surface mounting
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
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