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CHM6426XGP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CHM6426XGP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4 nS
   Cossⓘ - Capacitancia de salida: 75 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm
   Paquete / Cubierta: SOT-89
 

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CHM6426XGP Datasheet (PDF)

 ..1. Size:73K  chenmko
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CHM6426XGP

CHENMKO ENTERPRISE CO.,LTDCHM6426XGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 3 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-62/SOT-89FEATURE* Small package. (SC-62/SOT-89 )* High density cell design for extremely low RDS(ON). 4.6MAX. 1.6MAX.* Rugged and reliable.

 7.1. Size:108K  chenmko
chm6426pagp.pdf pdf_icon

CHM6426XGP

CHENMKO ENTERPRISE CO.,LTDCHM6426PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 16 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* High density cell design for extremely low RDS(ON). .094 (2.40).280 (7.10).035 (0.89).087

 7.2. Size:90K  chenmko
chm6426jgp.pdf pdf_icon

CHM6426XGP

CHENMKO ENTERPRISE CO.,LTDCHM6426JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 4.7 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High sat

 8.1. Size:166K  chenmko
chm6428jgp.pdf pdf_icon

CHM6426XGP

CHENMKO ENTERPRISE CO.,LTDCHM6428JGPSURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 4.1 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged an

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History: TPC8210 | IRF7484Q | IXTY1N80 | SM3106NSU | AM6411P | TK12A65D | BSC072N04LD

 

 
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