CHM65A3PAGP Todos los transistores

 

CHM65A3PAGP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CHM65A3PAGP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 56 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 38 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 220 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm
   Paquete / Cubierta: TO-252

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CHM65A3PAGP Datasheet (PDF)

 ..1. Size:112K  chenmko
chm65a3pagp.pdf

CHM65A3PAGP
CHM65A3PAGP

CHENMKO ENTERPRISE CO.,LTDCHM65A3PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 25 Volts CURRENT 38 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power

 9.1. Size:68K  chenmko
chm6503gp.pdf

CHM65A3PAGP
CHM65A3PAGP

CHENMKO ENTERPRISE CO.,LTDCHM6503GPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 3.6 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High sat

 9.2. Size:271K  chenmko
chm6561qgp.pdf

CHM65A3PAGP
CHM65A3PAGP

CHENMKO ENTERPRISE CO.,LTDCHM6561QGPSURFACE MOUNTDual N-Channel Enhancement MOS FET VOLTAGE 30 Volts CURRENT 2.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.FEATURESC-74/SOT-457* Small surface mounting type. (SC-74/SOT-457)* High density cell design for low RDS(ON). * Suitable for high packing density.(1) (6)*

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