CHM9926JGP Todos los transistores

 

CHM9926JGP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CHM9926JGP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 10 nC
   trⓘ - Tiempo de subida: 18 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
   Paquete / Cubierta: SO-8

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CHM9926JGP Datasheet (PDF)

 ..1. Size:94K  chenmko
chm9926jgp.pdf

CHM9926JGP
CHM9926JGP

CHENMKO ENTERPRISE CO.,LTDCHM9926JGPSURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 6 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged and

 7.1. Size:93K  chenmko
chm9926pagp.pdf

CHM9926JGP
CHM9926JGP

CHENMKO ENTERPRISE CO.,LTDCHM9926PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 26 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power

 7.2. Size:94K  chenmko
chm9926ajgp.pdf

CHM9926JGP
CHM9926JGP

CHENMKO ENTERPRISE CO.,LTDCHM9926AJGPSURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 6 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged and

 9.1. Size:110K  chenmko
chm9936ajgp.pdf

CHM9926JGP
CHM9926JGP

CHENMKO ENTERPRISE CO.,LTDCHM9936AJGPSURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 5.4 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged a

 9.2. Size:111K  chenmko
chm9952ajgp.pdf

CHM9926JGP
CHM9926JGP

CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNT CHM9952AJGPDual Enhancement Mode Field Effect TransistorN-channel: VOLTAGE 30 Volts CURRENT 3.7 AmpereP-channel: VOLTAGE 30 Volts CURRENT 2.9 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely lo

 9.3. Size:110K  chenmko
chm9939ajgp.pdf

CHM9926JGP
CHM9926JGP

CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNT CHM9939AJGPDual Enhancement Mode Field Effect TransistorN-channel: VOLTAGE 30 Volts CURRENT 7 AmpereP-channel: VOLTAGE 30 Volts CURRENT 3.5 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low

 9.4. Size:91K  chenmko
chm9956ajgp.pdf

CHM9926JGP
CHM9926JGP

CHENMKO ENTERPRISE CO.,LTDCHM9956AJGPSURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 3.7 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged a

 9.5. Size:92K  chenmko
chm9953ajgp.pdf

CHM9926JGP
CHM9926JGP

CHENMKO ENTERPRISE CO.,LTDCHM9953AJGPSURFACE MOUNT Dual P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 3.5 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High

 9.6. Size:91K  chenmko
chm9935ajgp.pdf

CHM9926JGP
CHM9926JGP

CHENMKO ENTERPRISE CO.,LTDCHM9935AJGPSURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 6 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged and

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