NDP6050 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NDP6050
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 100 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
|Id|ⓘ - Corriente continua de drenaje: 48 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de NDP6050 MOSFET
NDP6050 Datasheet (PDF)
ndp6051.pdf

isc N-Channel MOSFET Transistor NDP6051FEATURESDrain Current I =48A@ T =25D CDrain Source Voltage-: V =50V(Min)DSSStatic Drain-Source On-Resistance: R =0.022(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABS
ndp6030pl ndb6030pl.pdf

June 1997 NDP6030PL / NDB6030PL P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description FeaturesThese P-Channel logic level enhancement mode power field -30 A, -30 V. RDS(ON) = 0.042 @ VGS= -4.5 VRDS(ON) = 0.025 @ VGS= -10 V.effect transistors are produced using Fairchild's proprietary,high cell density, DMOS technology. This very high density
ndp6060l ndb6060l.pdf

April 1996 NDP6060L / NDB6060LN-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features48A, 60V. RDS(ON) = 0.025 @ VGS = 5V. These logic level N-Channel enhancement mode powerfield effect transistors are produced using Fairchild'sLow drive requirements allowing operation directly from logicproprietary, high cell density, DMOS technology. This
Otros transistores... NDP508A , NDP510A , NDP6020 , NDP6020P , NDP6030 , NDP6030L , NDP6030PL , NDP603AL , 4N60 , NDP6050L , NDP6051 , NDP6051L , NDP6060 , NDP6060L , NDP608A , NDP610A , NDP7050 .
History: ME95N03T-G | 2SK2054 | WMB018N04LG2
History: ME95N03T-G | 2SK2054 | WMB018N04LG2



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