CM800 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CM800
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 0.4 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 0.2 A
Tjⓘ - Temperatura máxima de unión: 200 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 30 Ohm
Encapsulados: TO-46
Búsqueda de reemplazo de CM800 MOSFET
- Selecciónⓘ de transistores por parámetros
CM800 datasheet
0.1. Size:51K 1
cm800e2c-66h.pdf 
MITSUBISHI HVIGBT MODULES CM800E2C-66H HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM800E2C-66H IC...................................................................800A VCES ....................................................... 3300V Insulated Type 1-elements in a pack (for brake) AISiC base plate APPLICA
0.2. Size:204K 1
cm800dzb-34n.pdf
MITSUBISHI HVIGBT MODULES CM800DZB-34N HIGH POWER SWITCHING USE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM800DZB-34N IC ...................................................................800A VCES ....................................................... 1700V Insulated Type 2-element in a Pack AISiC Baseplate T
0.3. Size:50K 1
cm800e2z-66h.pdf
MITSUBISHI HVIGBT MODULES CM800E2Z-66H HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM800E2Z-66H IC...................................................................800A VCES ....................................................... 3300V Insulated Type 1-elements in a pack (for brake) APPLICATION DC choppers,
0.4. Size:47K 1
cm800hb-50h.pdf
MITSUBISHI HVIGBT MODULES CM800HB-50H HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM800HB-50H IC...................................................................800A VCES ....................................................... 2500V Insulated Type 1-element in a pack APPLICATION Inverters, Converters, DC ch
0.6. Size:178K 1
cm800hc-66h.pdf
MITSUBISHI HVIGBT MODULES CM800HC-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM800HC-66H IC ...................................................................800A VCES ....................................................... 3300V Insulated Type 1-element in a Pack AISiC Baseplate APPLICATION Traction
0.7. Size:47K 1
cm800hb-66h.pdf
MITSUBISHI HVIGBT MODULES CM800HB-66H HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM800HB-66H IC...................................................................800A VCES ....................................................... 3300V Insulated Type 1-element in a pack APPLICATION Inverters, Converters, DC ch
0.9. Size:762K 1
cm800dz-34h.pdf
CM800DZ-34H HIGH POWER SWITHCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM800DZ-34H I 800 A C V 1700 V CES
0.10. Size:42K 1
cm800ha-66h.pdf
MITSUBISHI HVIGBT MODULES CM800HA-66H HIGH POWER SWITCHING USE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM800HA-66H IC...................................................................800A VCES ....................................................... 3300V Insulated Type 1-element in a pack APPLICATION Inverters, Converters, DC choppers, Indu
0.11. Size:182K 1
cm800e6c-66h.pdf
MITSUBISHI HVIGBT MODULES CM800E6C-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM800E6C-66H IC ...................................................................800A VCES ....................................................... 3300V Insulated Type 1-element in a Pack (for brake) AISiC Baseplate APPLICAT
0.12. Size:538K toshiba
tpcm8001-h.pdf
TPCM8001-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCM8001-H High-Efficiency DC DC Converter Applications Unit mm Notebook PC Applications 0.25 0.05 0.8 0.05 M A 8 5 Portable-Equipment Applications 0.2 0 0.2 Small footprint due to a small and thin package High-speed switching 0.55 4 1 Small gate char
0.14. Size:199K toshiba
tpcm8006.pdf
TPCM8006 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS ) TPCM8006 Lithium Ion Battery Applications Notebook PC Applications Unit mm Portable Equipment Applications 0.25 0.05 0.8 0.05 M A 8 5 Small footprint due to a small and thin package 0.2 0 0.2 Low drain-source ON-resistance RDS (ON) = 5.5 m (typ.) High forward transfer adm
0.15. Size:238K toshiba
tpcm8002-h.pdf
TPCM8002-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPCM8002-H High-Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications 0.05 0.25 0.8 0.05 M A 5 Portable Equipment Applications 8 0.2 0 0.2 Small footprint due to a small and thin package High-speed switching 0.55 4 1 Small gate charge QSW = 9.3 nC
0.16. Size:218K toshiba
tpcm8004-h.pdf
TPCM8004-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS V-H) TPCM8004-H High-Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications 0.25 0.05 0.8 0.05 M A Portable Equipment Applications 8 5 0.2 0 0.2 Small footprint due to a small and thin package High-speed switching 0.55 4 1 Small gate charge QSW = 5.0 nC (ty
Otros transistores... CHT2324GP, CHT84GP, CHT84SGP, CHT84VGP, CHT84WGP, CHT870GP, CHT-SNMOS80, CM697, IRFP450, CM860, CMF10120D, CMF20120D, CMKDM8005, CMLDM3737, CMLDM3757, CMLDM5757, CMLDM7002A
