CMLDM3737 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CMLDM3737
   Código: 7C3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 0.54 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 1.58 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.55 Ohm
   Paquete / Cubierta: SOT-563

Búsqueda de reemplazo de MOSFET CMLDM3737

CMLDM3737 Datasheet (PDF)

..1. Size:586K central
cmldm3737.pdf

CMLDM3737SURFACE MOUNTwww.centralsemi.comDUAL N-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMLDM3737 SILICON MOSFETSconsists of Dual N-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage.MARKING CODE: 7C3FEATURES: ESD Protection u

7.1. Size:589K central
cmldm3757.pdf

CMLDM3757SURFACE MOUNTwww.centralsemi.comN-CHANNEL AND P-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMLDM3757 COMPLEMENTARY MOSFETSconsists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage.MARKING CO

9.1. Size:587K central
cmldm7585.pdf

CMLDM7585SURFACE MOUNTwww.centralsemi.comN-CHANNEL AND P-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMLDM7585 COMPLEMENTARY MOSFETSconsists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage.MARKING CO

9.2. Size:665K central
cmldm7005.pdf

CMLDM7005CMLDM7005Rwww.centralsemi.comSURFACE MOUNTDUAL N-CHANNELDESCRIPTION:ENHANCEMENT-MODEThese CENTRAL SEMICONDUCTOR devices are SILICON MOSFETdual N-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer very low rDS(ON) and low threshold voltage. The CMLDM7005R utilizes a reverse pinout confi

9.3. Size:713K central
cmldm7003t.pdf

CMLDM7003TGSURFACE MOUNT SILICONwww.centralsemi.comDUAL N-CHANNELDESCRIPTION:ENHANCEMENT-MODEMOSFET The CENTRAL SEMICONDUCTOR CMLDM7003TG is a dual N-Channel enhancement-mode MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This device offers low rDS(ON), low VGS(th), and ESD protection up to 2kV.MARKIN

9.4. Size:456K central
cmldm8120t.pdf

CMLDM8120TGSURFACE MOUNT SILICONwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMLDM8120TG MOSFETis an enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and a MAX threshold voltage of 0.85V.MARKING CODE: CT8S

9.5. Size:623K central
cmldm7002a cmldm7002a cmldm7002aj.pdf

CMLDM7002ACMLDM7002AG*CMLDM7002AJwww.centralsemi.comSURFACE MOUNTDESCRIPTION:DUAL N-CHANNELThese CENTRAL SEMICONDUCTOR devices are ENHANCEMENT-MODESILICON MOSFET dual Enhancement-mode N-Channel Field Effect Transistors, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM7002A utilizes the USA pinout co

9.6. Size:521K central
cmldm7003e cmldm7003je.pdf

CMLDM7003ECMLDM7003JEENHANCED SPECIFICATIONwww.centralsemi.comSURFACE MOUNTDESCRIPTION:DUAL N-CHANNELThe CENTRAL SEMICONDUCTOR CMLDM7003E ENHANCEMENT-MODEand CMLDM7003JE are Enhancement-mode SILICON MOSFETN-Channel Field Effect Transistors, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM7003E uti

9.7. Size:586K central
cmldm8005.pdf

CMLDM8005SURFACE MOUNTwww.centralsemi.comDUAL P-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMLDM8005 SILICON MOSFETSconsists of Dual P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage.MARKING CODE: CC8FEATURES: ESD Protection u

9.8. Size:534K central
cmldm7120 cmldm7120g.pdf

CMLDM7120GSURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMLDM7120G SILICON MOSFETis an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage.MARKING CODE: C7

9.9. Size:518K central
cmldm8002aj cmldm8002a cmldm8002ag.pdf

CMLDM8002ACMLDM8002AG*CMLDM8002AJwww.centralsemi.comSURFACE MOUNTDESCRIPTION:DUAL P-CHANNELThese CENTRAL SEMICONDUCTOR devices are ENHANCEMENT-MODEdual chip Enhancement-mode P-Channel Field Effect SILICON MOSFETTransistors, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM8002A utilizes the USA pin

9.10. Size:518K central
cmldm7003 cmldm7003 cmldm7003j.pdf

CMLDM7003CMLDM7003G*CMLDM7003Jwww.centralsemi.comSURFACE MOUNTDESCRIPTION:DUAL N-CHANNELThese CENTRAL SEMICONDUCTOR devices ENHANCEMENT-MODEare dual Enhancement-mode N-Channel Field Effect SILICON MOSFETTransistors, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM7003 utilizes the USA pinout confi

9.11. Size:479K central
cmldm7120t.pdf

CMLDM7120TGSURFACE MOUNT SILICONwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMLDM7120TG MOSFETis an enhancement-mode N-Channel MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and a MAX threshold voltage of 0.85V.MARKING CODE: CT7F

9.12. Size:587K central
cmldm7484.pdf

CMLDM7484SURFACE MOUNTwww.centralsemi.comN-CHANNEL AND P-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMLDM7484 COMPLEMENTARY MOSFETSconsists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage.MARKING CO

9.13. Size:585K central
cmldm5757.pdf

CMLDM5757SURFACE MOUNTwww.centralsemi.comDUAL P-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMLDM5757 SILICON MOSFETSconsists of Dual P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage.MARKING CODE: 77CFEATURES: ESD Protection u

9.14. Size:511K central
cmldm8120.pdf

CMLDM8120CMLDM8120G*www.centralsemi.comSURFACE MOUNTP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThese CENTRAL SEMICONDUCTOR devices SILICON MOSFETare Enhancement-mode P-Channel Field Effect Transistors, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(on) and Low Theshold Voltage.MARKING

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