CMLDM7003 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CMLDM7003

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 0.28 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 25 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm

Encapsulados: SOT-563

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CMLDM7003 datasheet

 ..1. Size:518K  central
 cmldm7003 cmldm7003 cmldm7003j.pdf pdf_icon

CMLDM7003

CMLDM7003 CMLDM7003G* CMLDM7003J www.centralsemi.com SURFACE MOUNT DESCRIPTION DUAL N-CHANNEL These CENTRAL SEMICONDUCTOR devices ENHANCEMENT-MODE are dual Enhancement-mode N-Channel Field Effect SILICON MOSFET Transistors, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM7003 utilizes the USA pinout confi

 0.1. Size:713K  central
 cmldm7003t.pdf pdf_icon

CMLDM7003

CMLDM7003TG SURFACE MOUNT SILICON www.centralsemi.com DUAL N-CHANNEL DESCRIPTION ENHANCEMENT-MODE MOSFET The CENTRAL SEMICONDUCTOR CMLDM7003TG is a dual N-Channel enhancement-mode MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This device offers low rDS(ON), low VGS(th), and ESD protection up to 2kV. MARKIN

 0.2. Size:521K  central
 cmldm7003e cmldm7003je.pdf pdf_icon

CMLDM7003

CMLDM7003E CMLDM7003JE ENHANCED SPECIFICATION www.centralsemi.com SURFACE MOUNT DESCRIPTION DUAL N-CHANNEL The CENTRAL SEMICONDUCTOR CMLDM7003E ENHANCEMENT-MODE and CMLDM7003JE are Enhancement-mode SILICON MOSFET N-Channel Field Effect Transistors, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM7003E uti

 6.1. Size:665K  central
 cmldm7005.pdf pdf_icon

CMLDM7003

CMLDM7005 CMLDM7005R www.centralsemi.com SURFACE MOUNT DUAL N-CHANNEL DESCRIPTION ENHANCEMENT-MODE These CENTRAL SEMICONDUCTOR devices are SILICON MOSFET dual N-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer very low rDS(ON) and low threshold voltage. The CMLDM7005R utilizes a reverse pinout confi

MOSTRAR MÁS

Otros transistores... CMF10120D, CMF20120D, CMKDM8005, CMLDM3737, CMLDM3757, CMLDM5757, CMLDM7002A, CMLDM7002AJ, RFP50N06, CMLDM7003E, CMLDM7003J, CMLDM7003JE, CMLDM7003TG, CMLDM7005, CMLDM7120G, CMLDM7120T, CMLDM7484