CMLDM7585 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CMLDM7585
   Código: 87C
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 0.65 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.1 V
   Qgⓘ - Carga de la puerta: 1.58 nC
   Cossⓘ - Capacitancia de salida: 16 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.23 Ohm
   Paquete / Cubierta: SOT-563

Búsqueda de reemplazo de MOSFET CMLDM7585

CMLDM7585 Datasheet (PDF)

..1. Size:587K central
cmldm7585.pdf

CMLDM7585SURFACE MOUNTwww.centralsemi.comN-CHANNEL AND P-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMLDM7585 COMPLEMENTARY MOSFETSconsists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage.MARKING CO

8.1. Size:665K central
cmldm7005.pdf

CMLDM7005CMLDM7005Rwww.centralsemi.comSURFACE MOUNTDUAL N-CHANNELDESCRIPTION:ENHANCEMENT-MODEThese CENTRAL SEMICONDUCTOR devices are SILICON MOSFETdual N-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer very low rDS(ON) and low threshold voltage. The CMLDM7005R utilizes a reverse pinout confi

8.2. Size:713K central
cmldm7003t.pdf

CMLDM7003TGSURFACE MOUNT SILICONwww.centralsemi.comDUAL N-CHANNELDESCRIPTION:ENHANCEMENT-MODEMOSFET The CENTRAL SEMICONDUCTOR CMLDM7003TG is a dual N-Channel enhancement-mode MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This device offers low rDS(ON), low VGS(th), and ESD protection up to 2kV.MARKIN

8.3. Size:623K central
cmldm7002a cmldm7002a cmldm7002aj.pdf

CMLDM7002ACMLDM7002AG*CMLDM7002AJwww.centralsemi.comSURFACE MOUNTDESCRIPTION:DUAL N-CHANNELThese CENTRAL SEMICONDUCTOR devices are ENHANCEMENT-MODESILICON MOSFET dual Enhancement-mode N-Channel Field Effect Transistors, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM7002A utilizes the USA pinout co

8.4. Size:521K central
cmldm7003e cmldm7003je.pdf

CMLDM7003ECMLDM7003JEENHANCED SPECIFICATIONwww.centralsemi.comSURFACE MOUNTDESCRIPTION:DUAL N-CHANNELThe CENTRAL SEMICONDUCTOR CMLDM7003E ENHANCEMENT-MODEand CMLDM7003JE are Enhancement-mode SILICON MOSFETN-Channel Field Effect Transistors, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM7003E uti

8.5. Size:534K central
cmldm7120 cmldm7120g.pdf

CMLDM7120GSURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMLDM7120G SILICON MOSFETis an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage.MARKING CODE: C7

8.6. Size:518K central
cmldm7003 cmldm7003 cmldm7003j.pdf

CMLDM7003CMLDM7003G*CMLDM7003Jwww.centralsemi.comSURFACE MOUNTDESCRIPTION:DUAL N-CHANNELThese CENTRAL SEMICONDUCTOR devices ENHANCEMENT-MODEare dual Enhancement-mode N-Channel Field Effect SILICON MOSFETTransistors, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM7003 utilizes the USA pinout confi

8.7. Size:479K central
cmldm7120t.pdf

CMLDM7120TGSURFACE MOUNT SILICONwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMLDM7120TG MOSFETis an enhancement-mode N-Channel MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and a MAX threshold voltage of 0.85V.MARKING CODE: CT7F

8.8. Size:587K central
cmldm7484.pdf

CMLDM7484SURFACE MOUNTwww.centralsemi.comN-CHANNEL AND P-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMLDM7484 COMPLEMENTARY MOSFETSconsists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage.MARKING CO

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: