CMLM0574 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CMLM0574
Código: 57C
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.35 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 0.45 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 VQgⓘ - Carga de la puerta: 0.792 nC
Cossⓘ - Capacitancia de salida: 8 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.46 Ohm
Paquete / Cubierta: SOT-563
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CMLM0574 Datasheet (PDF)
cmlm0574.pdf
CMLM0574Multi Discrete Modulewww.centralsemi.comSURFACE MOUNT SILICONDESCRIPTION:N-CHANNEL MOSFET ANDThe CENTRAL SEMICONDUCTOR CMLM0574 is aLOW VF SCHOTTKY DIODEMulti Discrete Module consisting of a single N-Channelenhancement-mode MOSFET and a low VF Schottky diode packaged in a space saving SOT-563 surface mount case. This device is designed for small signalgener
cmlm0575.pdf
CMLM0575Multi Discrete Modulewww.centralsemi.comSURFACE MOUNT SILICONDESCRIPTION:N-CHANNEL MOSFET ANDThe CENTRAL SEMICONDUCTOR CMLM0575 is aLOW VF SCHOTTKY DIODEMulti Discrete Module consisting of a single N-Channelenhancement-mode MOSFET and a low VF Schottky diode packaged in a space saving SOT-563 surface mount case. This device is designed for small signalgener
cmlm0584.pdf
CMLM0584Multi Discrete Modulewww.centralsemi.comSURFACE MOUNT SILICONDESCRIPTION:P-CHANNEL MOSFET ANDThe CENTRAL SEMICONDUCTOR CMLM0584 is aLOW VF SCHOTTKY DIODEMulti Discrete Module consisting of a single P-Channelenhancement-mode MOSFET and a low VF Schottky diode packaged in a space saving SOT-563 surface mount case. This device is designed for small signalgener
cmlm0585.pdf
CMLM0585Multi Discrete Modulewww.centralsemi.comSURFACE MOUNT SILICONDESCRIPTION:P-CHANNEL MOSFET ANDThe CENTRAL SEMICONDUCTOR CMLM0585 is a LOW VF SCHOTTKY DIODEMulti Discrete Module consisting of a single P-Channel enhancement-mode MOSFET and a low VF Schottky diode packaged in a space saving SOT-563 surface mount case. This device is designed for small signal ge
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