NDP6060 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NDP6060
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 48 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
Paquete / Cubierta: TO220

Búsqueda de reemplazo de MOSFET NDP6060

NDP6060 Datasheet (PDF)

..1. Size:360K fairchild semi
ndp6060 ndb6060.pdf

March 1996 NDP6060 / NDB6060 N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese N-Channel enhancement mode power field effect 48A, 60V. RDS(ON) = 0.025 @ VGS=10V. transistors are produced using Fairchild's proprietary, highCritical DC electrical parameters specified at elevatedcell density, DMOS technology. This very high densitytemperature.

..2. Size:474K onsemi
ndp6060 ndb6060.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

0.1. Size:360K fairchild semi
ndp6060l ndb6060l.pdf

April 1996 NDP6060L / NDB6060LN-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features48A, 60V. RDS(ON) = 0.025 @ VGS = 5V. These logic level N-Channel enhancement mode powerfield effect transistors are produced using Fairchild'sLow drive requirements allowing operation directly from logicproprietary, high cell density, DMOS technology. This

0.2. Size:508K onsemi
ndp6060l ndb6060l.pdf

NDP6060L / NDB6060LN-Channel Logic Level Enhancement Mode Field Effect TransistorFeaturesGeneral Description48A, 60V. RDS(ON) = 0.025 @ VGS = 5V.Low drive requirements allowing operation directly from logicThese logic level N-Channel enhancement mode power drivers. VGS(TH)

8.1. Size:116K njs
ndp605a ndp605b ndp606a ndp606b.pdf

Otros transistores... NDP6030 , NDP6030L , NDP6030PL , NDP603AL , NDP6050 , NDP6050L , NDP6051 , NDP6051L , IRF2807 , NDP6060L , NDP608A , NDP610A , NDP7050 , NDP7050L , NDP7051 , NDP7051L , NDP7052 .

Liste

Recientemente añadidas las descripciónes de los transistores: