CMPDM203NH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CMPDM203NH
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.35 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 3.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 97 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
Paquete / Cubierta: SOT23
- Selección de transistores por parámetros
CMPDM203NH Datasheet (PDF)
cmpdm203nh.pdf

CMPDM203NHSURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMPDM203NH SILICON MOSFETis a High Current N-Channel Enhancement-mode Silicon MOSFET, manufactured by the N-Channel DMOS Process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers High Current, Low rDS(ON), Low Threshold Volta
cmpdm202ph.pdf

CMPDM202PHSURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMPDM202PH SILICON MOSFETis a High Current P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers High Current, Low rDS(ON), Low Threshold Volta
cmpdm8002a.pdf

CMPDM8002ASURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMPDM8002A SILICON MOSFETis an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. MARKING CODE: C802AFEATURES:SOT-23 CASE Low rDS(ON) Low VDS(O
cmpdm7002a cmpdm7002a cmpdm7002ag.pdf

CMPDM7002ACMPDM7002AG*www.centralsemi.comSURFACE MOUNTN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMPDM7002A SILICON MOSFETand CMPDM7002AG are special versions of the 2N7002 Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. These special de
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History: AP4085G | KP746B1 | TMPF11N50SG | AP4407GS-HF | IPW65R280E6 | 2SK3679-01MR | FCP220N80
History: AP4085G | KP746B1 | TMPF11N50SG | AP4407GS-HF | IPW65R280E6 | 2SK3679-01MR | FCP220N80



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