CMUDM7005 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CMUDM7005
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 0.65 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 16 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.23 Ohm
Paquete / Cubierta: SOT-523
Búsqueda de reemplazo de MOSFET CMUDM7005
CMUDM7005 Datasheet (PDF)
cmudm7005.pdf
CMUDM7005SURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMUDM7005 SILICON MOSFETis an Enhancement-mode N-Channel MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Theshold Voltage.MARKING CODE: 5C7FEATURES:SOT-52
cmudm7001.pdf
CMUDM7001SURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMUDM7001 SILICON MOSFETis an N-Channel Enhancement-mode Silicon MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Theshold Voltage.MARKING CODE: C7AFEATURES:
cmudm7004.pdf
CMUDM7004SURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMUDM7004 SILICON MOSFETis an Enhancement-mode N-Channel MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(on) and Low Theshold Voltage.MARKING CODE: 74CFEATURES:SOT-52
cmudm7590.pdf
TMCMUDM3590 N-CHCentralCMUDM7590 P-CHSemiconductor Corp.SURFACE MOUNTDESCRIPTION:N-CHANNEL AND P-CHANNELThe CENTRAL SEMICONDUCTOR CMUDM3590 ENHANCEMENT-MODEand CMUDM7590 are complementary N-Channel COMPLEMENTARY MOSFETSand P-Channel Enhancement-mode silicon MOSFETsdesigned for high speed pulsed amplifier and driverapplications. These devices offer desirable MOSFETe
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