CMUDM8004 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CMUDM8004

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 0.45 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 15 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.1 Ohm

Encapsulados: SOT-523

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CMUDM8004 datasheet

 ..1. Size:394K  central
 cmudm8004.pdf pdf_icon

CMUDM8004

CMUDM8004 SURFACE MOUNT www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMUDM8004 SILICON MOSFET is an Enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(on) and Low Theshold Voltage. MARKING CODE 84C SOT-523 CASE FEA

 6.1. Size:393K  central
 cmudm8005.pdf pdf_icon

CMUDM8004

CMUDM8005 SURFACE MOUNT www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMUDM8005 SILICON MOSFET is an Enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Theshold Voltage. MARKING CODE 5C8 FEATURES SOT-52

 6.2. Size:341K  central
 cmudm8001.pdf pdf_icon

CMUDM8004

CMUDM8001 SURFACE MOUNT www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMUDM8001 SILICON MOSFET is a P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Theshold Voltage. MARKING CODE C8A FEATURES

 9.1. Size:622K  central
 cmudm7590.pdf pdf_icon

CMUDM8004

TM CMUDM3590 N-CH Central CMUDM7590 P-CH Semiconductor Corp. SURFACE MOUNT DESCRIPTION N-CHANNEL AND P-CHANNEL The CENTRAL SEMICONDUCTOR CMUDM3590 ENHANCEMENT-MODE and CMUDM7590 are complementary N-Channel COMPLEMENTARY MOSFETS and P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These devices offer desirable MOSFET e

MOSTRAR MÁS

Otros transistores... CMT2N7002AG, CMT2N7002K, CMT2N7002WG, CMUDM7001, CMUDM7004, CMUDM7005, CMUDM7590, CMUDM8001, STP75NF75, CMUDM8005, CMXDM7002A, CP640, CP643, CP650, CP651, CP664, CP665