CS1N60A3H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CS1N60A3H
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 25 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 0.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 6.3 nS
Cossⓘ - Capacitancia de salida: 10.7 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 15 Ohm
Encapsulados: TO-251
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CS1N60A3H datasheet
..1. Size:422K wuxi china
cs1n60a3h.pdf 
Silicon N-Channel Power MOSFET R CS1N60 A3H General Description VDSS 600 V CS1N60 A3H, the silicon N-channel Enhanced ID 0.8 A PD (TC=25 ) 25 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 11 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
7.1. Size:424K wuxi china
cs1n60a1h.pdf
Silicon N-Channel Power MOSFET R CS1N60 A1H General Description VDSS 600 V CS1N60 A1H, the silicon N-channel Enhanced ID 0.8 A PD (TC=25 ) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 11 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
7.2. Size:511K wuxi china
cs1n60a4h.pdf
Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS1N60 A4H General Description VDSS 600 V CS1N60 A4H, the silicon N-channel Enhanced ID 0.8 A PD (TC=25 ) 25 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 11 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor
8.1. Size:241K can-sheng
cs1n60 to-252.pdf
ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.com ShenZhen CanSheng Industry Development Co.,Ltd. TO-252 Plastic-Encapsulate Transistors TO-252 Plastic-Encapsulate Transistors TO-252 Plastic-Encapsulate Transistors TO-252 Plastic-Encapsula
8.2. Size:245K can-sheng
cs1n60 to-92.pdf
ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com TO-92 Plastic-Encapsulate Transistors 1N60 MOSFET(N-Channel) FEATURES Robust High Voltage Terminrtion Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterrized for Use in Bridge Circuits MAXIMU
8.3. Size:483K crhj
cs1n60 c1h.pdf
Silicon N-Channel Power MOSFET R CS1N60 C1H General Description VDSS 600 V CS1N60 C1H-BD, the silicon N-channel Enhanced ID 1.0 A PD (TC=25 ) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
8.4. Size:537K crhj
cs1n60 a1h.pdf
Silicon N-Channel Power MOSFET R CS1N60 A1H General Description VDSS 600 V CS1N60 A1H, the silicon N-channel Enhanced ID 0.8 A PD (TC=25 ) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 11 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
8.5. Size:532K crhj
cs1n60 a3h.pdf
Silicon N-Channel Power MOSFET R CS1N60 A3H General Description VDSS 600 V CS1N60 A3H, the silicon N-channel Enhanced ID 0.8 A PD (TC=25 ) 25 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 11 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
8.6. Size:1006K crhj
cs1n60 b1r.pdf
Silicon N-Channel Power MOSFET R CS1N60 B1R General Description VDSS 600 V CS1N60 B1R, the silicon N-channel Enhanced ID 1.5 A PD (TC=25 ) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
8.7. Size:991K crhj
cs1n60 b3r.pdf
Silicon N-Channel Power MOSFET R CS1N60 B3R General Description VDSS 600 V CS1N60 B3R, the silicon N-channel Enhanced ID 1.5 A PD (TC=25 ) 32 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
8.8. Size:530K crhj
cs1n60 c3h.pdf
Silicon N-Channel Power MOSFET R CS1N60 C3H General Description VDSS 600 V CS1N60 C3H, the silicon N-channel Enhanced ID 1.0 A PD (TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
8.9. Size:262K foshan
cs1n60f.pdf
BRF1N60(CS1N60F) N-CHANNEL MOSFET/N MOS DC/DC Purpose These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. , , Features Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25
8.10. Size:376K wuxi china
cs1n60c1hd.pdf
Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS1N60 C1HD General Description VDSS 600 V CS1N60 C1HD, the silicon N-channel Enhanced ID 1.5 A PD (TC=25 ) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 7.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor
8.11. Size:530K wuxi china
cs1n60c3h.pdf
Silicon N-Channel Power MOSFET R CS1N60 C3H General Description VDSS 600 V CS1N60 C3H, the silicon N-channel Enhanced ID 1.0 A PD (TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
8.12. Size:1006K wuxi china
cs1n60b1r.pdf
Silicon N-Channel Power MOSFET R CS1N60 B1R General Description VDSS 600 V CS1N60 B1R, the silicon N-channel Enhanced ID 1.5 A PD (TC=25 ) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
8.13. Size:483K wuxi china
cs1n60c1h.pdf
Silicon N-Channel Power MOSFET R CS1N60 C1H General Description VDSS 600 V CS1N60 C1H-BD, the silicon N-channel Enhanced ID 1.0 A PD (TC=25 ) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
8.14. Size:991K wuxi china
cs1n60b3r.pdf
Silicon N-Channel Power MOSFET R CS1N60 B3R General Description VDSS 600 V CS1N60 B3R, the silicon N-channel Enhanced ID 1.5 A PD (TC=25 ) 32 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
Otros transistores... CS150N03A8, CS150N04A8, CS15N60, CS16N60A8H, CS19N40A8H, CS19N40AN, CS1N50A1, CS1N60A1H, IRLB3034, CS1N60B1R, CS1N60B3R, CS1N60C1H, CS1N60C3H, CS1N60F, CS1N65A1, CS1N65A3, CS1N65B1
