CS2N60A4T Todos los transistores

 

CS2N60A4T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CS2N60A4T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 33 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.5 Ohm
   Paquete / Cubierta: TO-252
 

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CS2N60A4T Datasheet (PDF)

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CS2N60A4T

Silicon N-Channel Power MOSFET R CS2N60 A4T General Description VDSS 600 V CS2N60 A4T, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 6.1. Size:239K  wuxi china
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CS2N60A4T

Silicon N-Channel Power MOSFET R CS2N60 A4H General Description VDSS 600 V CS2N60 A4H, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 7.1. Size:334K  wuxi china
 cs2n60a7h.pdf pdf_icon

CS2N60A4T

Silicon N-Channel Power MOSFET R CS2N60 A7H General Description VDSS 600 V CS2N60 A7H, the silicon N-channel Enhanced ID 2 A PD (TC=25) 24 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 7.2. Size:234K  wuxi china
 cs2n60a3h.pdf pdf_icon

CS2N60A4T

Silicon N-Channel Power MOSFET R CS2N60 A3H General Description VDSS 600 V CS2N60 A3H, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

MOSTRAR MÁS

Otros transistores... CS250 , CS27P06 , CS2807 , CS2837AND , CS2907Z , CS2N50A4 , CS2N60A3H , CS2N60A4H , AON7408 , CS2N60A7H , CS2N60FA9H , CS2N60I , CS2N65A3 , CS2N65A3HY , CS2N65A4HY , CS2N65FA9HY , CS2N70A3R .

 

 
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