CS2N60A4T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CS2N60A4T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 33 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 4.5 Ohm

Encapsulados: TO-252

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CS2N60A4T datasheet

 ..1. Size:356K  wuxi china
 cs2n60a4t.pdf pdf_icon

CS2N60A4T

Silicon N-Channel Power MOSFET R CS2N60 A4T General Description VDSS 600 V CS2N60 A4T, the silicon N-channel Enhanced ID 2 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 6.1. Size:239K  wuxi china
 cs2n60a4h.pdf pdf_icon

CS2N60A4T

Silicon N-Channel Power MOSFET R CS2N60 A4H General Description VDSS 600 V CS2N60 A4H, the silicon N-channel Enhanced ID 2 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 7.1. Size:334K  wuxi china
 cs2n60a7h.pdf pdf_icon

CS2N60A4T

Silicon N-Channel Power MOSFET R CS2N60 A7H General Description VDSS 600 V CS2N60 A7H, the silicon N-channel Enhanced ID 2 A PD (TC=25 ) 24 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 7.2. Size:234K  wuxi china
 cs2n60a3h.pdf pdf_icon

CS2N60A4T

Silicon N-Channel Power MOSFET R CS2N60 A3H General Description VDSS 600 V CS2N60 A3H, the silicon N-channel Enhanced ID 2 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

MOSTRAR MÁS

Otros transistores... CS250, CS27P06, CS2807, CS2837AND, CS2907Z, CS2N50A4, CS2N60A3H, CS2N60A4H, IRFP250N, CS2N60A7H, CS2N60FA9H, CS2N60I, CS2N65A3, CS2N65A3HY, CS2N65A4HY, CS2N65FA9HY, CS2N70A3R