CS320 Todos los transistores

 ..1. Size:136K  china
 cs320.pdf

CS320 N PD TC=25 50 W 0.4 W/ ID VGS=10V,TC=25 3.3 A ID VGS=10V,TC=100 2.1 A IDM 13 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 2.5 /W RthJA 30 /W BVDSS VGS=0V,ID=0.25 mA 400 V RDS on VGS=10

 0.1. Size:868K  1
 jcs3205ch jcs3205sh.pdf

N N-CHANNEL MOSFET R JCS3205H Package MAIN CHARACTERISTICS ID 110 A VDSS 55 V Rdson-max 8 m @Vgs=10V Qg-typ 78nC APPLICATIONS High efficiency switch mode power supplies UPS UPS FEATURES Low gate charge

 0.2. Size:865K  jilin sino
 jcs3205ch jcs3205sh.pdf

 0.3. Size:1031K  blue-rocket-elect
 brcs3205ra.pdf

BRCS3205RA Rev.I Jan.-2019 DATA SHEET / Descriptions N TO-220 N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features Low On-Resistance, fast switching. / Applications DC/DC These devices are well suited for high efficiency switching DC/DC converters

 0.4. Size:308K  crhj
 cs3205 b8.pdf

Silicon N-Channel Power MOSFET R CS3205 B8 General Description VDSS 55 V CS3205 B8, the silicon N-channel Enhanced ID 120 A PD(TC=25 ) 230 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 7.6 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 0.5. Size:427K  crhj
 cs3205 a8.pdf

Silicon N-Channel Power MOSFET R CS3205 A8 VDSS 60 V General Description ID 120 A CS3205A8, the silicon N-channel Enhanced VDMOSFETs, PD (TC=25 ) 230 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 7 m the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

 0.6. Size:58K  china
 cs3207.pdf

CS3207 N PD TC=25 330 W ID VGS=10V,TC=25 180 A IDM 720 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.45 /W BVDSS VGS=0V,ID=0.25mA 75 V RDS on VGS=10V,ID=30A 3.6 4.5 m VGS th VDS=VGS,ID=0.25mA 2.0 4.0 V gfs VDS=50V

 0.7. Size:66K  china
 cs3205 cs5y3205.pdf

CS5Y3205 N PD TC=25 100 W 0.8 W/ ID VGS=10V,TC=25 18 A ID VGS=10V,TC=100 18 A IDM 72 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 1.25 /W BVDSS VGS=0V,ID=0.25mA 55 V RDS on VGS=10V,ID=18A 0.022 VGS

 0.8. Size:2855K  citcorp
 cs3205a8.pdf

CS3025A8 60V Silicon N-Channel Power MOSFET Features Outline Fast switching. TO-220AB ESD improved capability. 0.189(4.80) 0.173(4.30) Low gate charge. 0.409(10.50) 0.378(10.10) 0.114(1.40) Low reverse transfer capacitances. 0.098(1.20) 100% single pulse avalanche energy test. 0.638(16.0) 0.606(15.0) Marking code Mechanical data G D S Epoxy

 0.9. Size:633K  wuxi china
 cs3205b8.pdf

Silicon N-Channel Power MOSFET R CS3205 B8 General Description VDSS 55 V CS3205 B8, the silicon N-channel Enhanced ID Silicon limited current 120 A PD(TC=25 ) 230 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 7.6 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transisto